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Part Naming Conventions

Clicking on product's category allows you to see Radio-Frequency Devices Part Naming Conventions.

  • Radio-Frequency Diode (EIAJ registration products)

    Example of Radio-Frequency Diode (EIAJ registration products)

    1. The value that subtracted 1 from the total number of terminals
    2. S stands for Semiconductor
    3. The kind of diode
      This section shows the kind of the diode being used.
      ( It is omitted in certain cases. )
      • S: diode of general-purpose use, detection use, fequency conversion use, and switching use
      • V: variable capacitance diode, PIN diode
      • Z: zener diode
    4. Serial number
      EIAJ registration numbers

  • Radio-Frequency Diode (EIAJ un-registration products)

    Example of Radio-Frequency Diode (EIAJ un-registration products)

    1. JD means High-frequency diode
    2. The kind of devices
      This section shows the kind of the devices being used.
      It is classified into H, P, S, and V by the devices being loaded.
      • H: schottky barrier diode
      • P: PIN diode
      • S: band switching diode
      • V: variable capacitance diode
    3. The number of terminals
    4. Internal connection
      This section shows the kind of the internal connection of a product.
      • S: single
      • C: cathode common
      • P: parallel
    5. Serial number
    6. Package type
      (No mark) S-MINI
      U USC, USQ
      T TESC, TESQ
      E ESC
      S sESC
      FS fSC
      CT CST3, CST4
      SC SC2
      FV VESM

  • Radio-Frequency Transistor (EIAJ registration pruducts)

    Example of Radio-Frequency Transistor (EIAJ registration pruducts)

    1. The value that subtracted 1 from the total number of terminals
    2. S stands for Semiconductor
    3. The kind of circuit
      This section shows the kind of the circuit of a product.
      It is classified into form A to K by the circuit of a product.
      • A: a transistor of high-frequency and PNP structure
      • B: a transistor of low-frequency and PNP structure
      • C: a transistor of high-frequency and NPN structure
      • D: a transistor of low-frequency and NPN structure
      • J: a transistor of effective transistor ( FET )
      • K: an Nch field effective transistor ( FET )
    4. Serial number
      EIAJ registration numbers.
    5. Changes
      The additional symbol which shows some changes.

  • Radio-Frequency Transistor (Microwave transistor)

    Example of Radio-Frequency Transistor (Microwave transistor)

    1. MT stands for Toshiba Microwave transistor
    2. The number of terminals
    3. Internal connection
      This section shows the kind of the internal connection of a procuct.
      • S: Single
      • C: Cascade arrangement
      • P: Parallel arrangement
      • L: Lateral arrangement
    4. Serial number
    5. Changes
      The additional symbol which shows some changes
    6. Package type
      This section shows the package type.
      (No mark) S-MINI, SMQ
      U USM, USQ, US6
      S SSM, sES6
      T TESM, TU6, TESQ
      E ES6
      FS fSM, fS6
      CT CST3

  • Radio-Frequency Power Transistor (EIAJ registration pruducts)

    Example of Radio-Frequency Power Transistor (EIAJ registration pruducts)

    1. The value that subtracted 1 form the total number of terminals
    2. S stands for Semiconductor
    3. The kind of circuit
      This section shows the kind of the circuit of a product.
      It is classified into from A to K by the circuit being used.
      • A: a transistor of high-frequency and PNP structure
      • B: a transistor of low-frequency and PNP structure
      • C: a transistor of high-frequency and NPN structure
      • D: a transistor of low-frequency and NPN structure
      • J: a P-ch field effective transistor (FET)
      • K: an N-ch field effective transistor (FET)
    4. Serial number
      EIAJ registration numbers
    5. Changes
      The additional symbol which shows some changes.

  • Radio-Frequency Power Transistor (RF-MOSFET)

    Example of Radio-Frequency Power Transistor (RF-MOSFET)

    1. RFM stands for Toshiba RF-MOSFET.
    2. This section shows the output power(W) of a procuct.
      • 00: 0.03W
      • 07: 7.0W
      • 12: 11.5W
    3. This section shows the operating frequency(MHz) of a procuct.
      • U: 400 to 520MHz
      • M: 700 to 950MHz
    4. This section shows the operating voltage(V) of a procuct.
      • 4: 4.5V
      • 7: 7.2V
    5. Other information
    6. Package type
      It shows the package type.
      • U: USQ
      • M: PW-MINI
      • X: PW-X

  • Radio-frequency Power module

    Example of Radio-frequency Power module

    1. S-A means Toshiba RF power module
    2. Frequency band
      • U: UHF
      • V: VHF
    3. Serial number
    4. Changes
      The additional symbol which shows some changes.
    5. Frequency band subdivision
      Magnitude relation is as follows.
      VL < L < M < H < VH < SH

  • Cell packs for Radio-frequency use

    Example of Cell packs for Radio-frequency use

    1. Materials, Applications
      This section shows the materials and applications.
      The details are shown in the following table.
      1 Materials Applications
      TA40 Si Crystal oscillators
      UHF Wide band Amp.
      VHF-UHF Wide band Amp.
      VHF (Wide) RF Amp.
      Cable modems
      TA41 VHF-UHF Amp. MIX
      VHF-UHF DBM
      1.9GHz U/C MIX
      1 GHz band D/C IC
      TA43 BS/CS D/C IC
      TG20 GaAs Power Amp. for PHS ( Personal Handy phone System )
      TG22 PHS SPDT Sw.
      General purpose SPDT Sw.
      ATT
    2. Serial number
    3. Package type
      • FU: USV
      • F / AF: SMQ / SMV / SM6 / SM8 / SSOP20
      • FE: ESV / ES6
      • FT: TU6
      • FC: CS6
      • S: sES6
      • TU: UF6
      • CTB: CST6B
      • CT: CST20

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.