MT3S111P

Not Recommended for New Design

Radio-frequency SiGe Heterojunction Bipolar Transistor

Description

Application Scope VHF/UHF band low noise, low distortion amplifier
Polarity NPN
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name PW-Mini
Package Image PW-Mini
JEITA SC-62
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
4.6×4.2×1.6
Package Dimensions View
Land pattern dimensions View

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current IC 0.1 A
Collector power dissipation PC 300 mW
Collector power dissipation (mounted on board) PC 1000 mW
Junction temperature Tj 150
Collector-emitter voltage VCEO 6 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Insertion Gain (Typ.) |S21|2 f=1GHz 10.5 dB
Transition frequency (Typ.) fT - 8 GHz
Noise Figure (Typ.) NF f=1GHz 0.95 dB

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