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SSM3J307TEOL announced

Small-signal MOSFET


Polarity P-ch
Generation U-MOSⅤ
RoHS Compatible Product(s) (#) Available
Assembly bases Japan


Package Information

Package Image TSM
Toshiba Package Name TSM
Pins 3
Mounting Surface Mount
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain current ID -5 A
Drain-Source voltage VDSS -20 V
Gate-Source voltage VGSS +/-8 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 0.031 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 0.040 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 0.056 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.5V 0.083 Ω
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=4.5V 0.025 Ω
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=2.5V 0.031 Ω
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=1.8V 0.038 Ω
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=1.5V 0.046 Ω
Gate threshold voltage (Max) Vth - -1.0 V
Gate threshold voltage (Min) Vth - -0.3 V


Catalog Small-Signal Semiconductors[Jul,2015] (PDF: 1602KB)


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