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Power MOSFET (N-ch 500V<VDSS≤700V)


Polarity N-ch
Generation DTMOSⅣ
RoHS Compatible Product(s) (#) Available
Assembly bases Japan

Package Information

Toshiba Package Name TO-3P(N)
Package Image TO-3P(N)
Pins 3
Mounting Through Hole
Package Dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain current ID 30.8 A
Power Dissipation PD 230 W
Drain-Source voltage VDSS 600 V
Gate-Source voltage VGSS +/-30 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Input capacitance (Typ.) Ciss - 3000 pF
Total gate charge (Typ.) Qg - 105 nC
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 0.099 Ω


Data sheet TK31J60W5 Data sheet/Japanese (PDF: 371KB)
Data sheet TK31J60W5 Data sheet/English (PDF: 243KB)
PSpice PSpice Model [Mar,2017] (lib: 3KB)
Reliability Information Reliability Data [Mar,2017] (PDF: 86KB)
Environment Information Certificate on Content of SVHC of REACH [Oct,2017] (PDF: 44KB) UPDATED
Application Note Structures and Characteristics: Power MOSFET Application Notes [Nov,2016] (PDF: 484KB)
Application Note Maximum Ratings: Power MOSFET Application Notes [Nov,2016] (PDF: 1075KB)
Application Note Electrical Characteristics: Power MOSFET Application Notes [Nov,2016] (PDF: 1092KB)
Application Note Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes [Nov,2016] (PDF: 1426KB)
Application Note Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes [Nov,2016] (PDF: 1125KB)
Catalog Selection Guide MOSFETs 2017Sep [Sep,2017] (PDF: 2535KB)
Catalog MOSFETs [Mar,2016] (PDF: 2526KB)
Catalog Part Number List: MOSFETs [Mar,2016] (PDF: 1295KB)


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