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2SK3567EOL announced

Power MOSFET (N-ch 500V<VDSS≤700V)


Polarity N-ch
Generation π-MOSⅥ
RoHS Compatible Product(s) (#) Available
Assembly bases Malaysia


Package Information

Package Image TO-220SIS
Toshiba Package Name TO-220SIS
Pins 3
Mounting Through Hole

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain current ID 3.5 A
Power Dissipation PD 35 W
Drain-Source voltage VDSS 600 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Total gate charge (Typ.) Qg - 16 nC
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2.2 Ω


Application Note Construction and Characteristics: Power MOSFET Application Notes[Oct,2004] (PDF: 108KB)
Application Note Maximum Ratings: Power MOSFET Application Notes[Oct,2004] (PDF: 191KB)
Application Note Electrical Characteristics: Power MOSFET Application Notes[Oct,2004] (PDF: 182KB)
Application Note Application Precautions: Power MOSFET Application Notes[Oct,2004] (PDF: 303KB)
Application Note Heat Sink Design: Power MOSFET Application Notes[Oct,2004] (PDF: 237KB)


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