Power MOSFET (N-ch 500V<VDSS≤700V)
|Orderable part number||Assembly bases|
|RoHS Compatible Product(s) (#)||Available|
|Toshiba Package Name||TO-3P(N)|
|Input capacitance (Typ.)||Ciss||-||3000||pF|
|Total gate charge (Typ.)||Qg||-||105||nC|
|Drain-Source on-resistance (Max)||RDS(ON)|||VGS|=10V||0.099||Ω|
|Simulation Model||PSpice Model[Jan,2014]||(lib: 3KB)|
|Application Note||Construction and Characteristics: Power MOSFET Application Notes[Jan,2004]||(PDF: 108KB)|
|Application Note||Maximum Ratings: Power MOSFET Application Notes[Jan,2004]||(PDF: 191KB)|
|Application Note||Electrical Characteristics: Power MOSFET Application Notes[Jan,2004]||(PDF: 182KB)|
|Application Note||Application Precautions: Power MOSFET Application Notes[Jan,2004]||(PDF: 303KB)|
|Application Note||Heat Sink Design: Power MOSFET Application Notes[Jan,2004]||(PDF: 237KB)|
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