New High-Performance ESD Protection Diodes from Toshiba

May 4, 2016

Suited to the High-Speed Interfaces of Mobile Devices; Feature Low Dynamic Resistance

ESD Protection TVS Diodes

IRVINE, Calif. -- Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced the introduction of four new ESD protection diodes: the DF2B5M4SL, DF2B6M4SL, DF10G5M4N and DF10G6M4N. The new, high-performance diodes shield mobile devices from electrostatic discharge and noise and are designed for use in smartphones, tablets, laptop PCs, and wearable devices.

“By applying a new process which uses our proprietary snapback technology, these products feature low capacitance, low dynamic resistance and high endurance simultaneously,” noted Talayeh Saderi, business development manager for TAEC. “They are extremely robust and should contribute to system reliability.”

Toshiba’s new ESD protection diodes achieve their high-performance capabilities through a low dynamic resistance of RDYN=0.5Ω (typ.). Resistance is improved by 50 percent when compared with diodes that employ the conventional ESD protection diode array process1.

When it comes to packaging, the DF2B5M4SL and DF2B6M4SL’s small SOD-962 (0.62×0.32 mm) package makes them suitable for high density mounting, while the DF10G5M4N and DF10G6M4N’s DFN10 multibit package enables flow-through layouts.

Key Features:

  • High protection performance with low dynamic resistance:
    RDYN=0.5 Ω (typ.) (improved 50 percent compared with conventional process product)
  • Suppresses signal quality deterioration via low capacitance: 
    Ct=0.2 pF (typ.) @VR=0 V, f=1 MHz
  • High electrostatic discharge voltage:
    VESD= ±20 kV (min) @IEC61000-4-2 (contact discharge)
    Level4 (about 2 times more conventional process product)
  • Low clamp Voltage:
    • DF2B5M4SL, DF10G5M4N: VC=24 V (typ.) @ITLP=30 A
    • DF2B6M4SL, DF10G6M4N: VC=25 V (typ.) @ITLP=30 A

Main Specifications

(@Ta=25 ºC)

Part number

Number of Bits

Absolute maximum ratings

VRWM max (V)

VBR (V)

VC typ (V)3

RDYN typ.3 @8 to 16 A (Ω)

Ct typ. @0 V, 1 MHz (pF)

Package

    VESD2 (kV)  

min/ max

@IBR (mA)

@16 A

@30 A

0.5 0.2

SOD-962

DF2B5M4SL

1 Bit

±20

3.6

4/ 6

1

17

24

   

DFN10

DF10G5M4N

4 Bits

       

SOD-962

DF2B6M4SL

1 Bit

 

5.5

5.6/ 8

 

18

25

   

DFN10

DF10G6M4N

4 Bits

         

Pricing and Availability

Toshiba’s new ESD protection diodes are available now. Please contact your local Toshiba Sales Office for samples.

*About TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide.  A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), solid state hybrid drives (SSHDs), discrete devices, custom SoCs/ASICs, imaging products, microcontrollers, wireless components, mobile peripheral devices, advanced materials and medical tubes that make possible today’s leading smartphones, tablets, cameras, medical devices, automotive electronics, industrial applications, enterprise solutions and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan’s largest semiconductor, solid state drive and hard disk drive manufacturer and the world’s seventh largest semiconductor manufacturer (Gartner, 2015 Worldwide Semiconductor Revenue, January, 2016). Founded in Tokyo in 1875, Toshiba is at the heart of a global network of over 580 consolidated companies employing over 199,000 people worldwide. Visit Toshiba's web site at http://toshiba.semicon-storage.com.

1DF2B7M2SL (EAP-II process product)
2@IEC61000-4-2 (contact discharge)
3@TLP parameter: ZO=50 Ω, tp=100 ns, tr=300 ps, averaging window t1=30 ns to t2=60 ns


Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.

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