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The amorphous noise suppression devices, AMOBEADS® and SPIKE KILLER®, suppress rapid changes in current which could otherwise lead to electrical noise in many circuits. Unlike other noise reduction methods which absorb noise after it is created, amorphous noise suppression devices suppress the source of the noise. Because of their square-shaped magnetic hysteresis behavior, amorphous noise suppression devices have a very large inductance when the current crosses zero (i.e. changes sign). This large inductance effectively blocks any further current changes. During normal current flow amorphous noise suppression devices have very low inductance. The reverse recovery phenomenon in semiconductor switching devices occurs when the current switches off. This phenomenon can lead to noise in the circuit. Amorphous noise suppression devices effectively and efficiently decrease the noise caused by the reverse recovery current.
AMOBEADS are structurally optimized for use with single-turn windings. They are intended for applications where they are simply slipped over the leads of the components to be quieted.
SPIKE KILLER are named for their effective suppression of current spikes in switching circuits. "SPIKE KILLER" are small saturable cores which are usually wire wound. "SPIKE KILLER" provide excellent noise suppression and protection of semiconductors.
The amorphous noise suppression devices, AMOBEADS and SPIKE KILLER, suppress rapid changes in current which could otherwise lead to electrical noise in many circuits. Unlike other noise reduction methods that absorb noise after it is created, amorphous noise suppression devices suppress the source of the noise.
Please feel free to contact us to discuss your application and to receive detailed information on the product of interest. For further information, please contact the Toshiba Advanced Materials Division:
Toshiba America Electronic Components, Inc.
Advanced Materials Division
290 Donald Lynch Blvd., Marlborough, MA 01752
Tel: (508) 303-5041, Fax: (508) 481-8890
For other product details, please visit our affiliate Toshiba Materials Co., Ltd.
|Description||O.D. (mm)A*||Length (mm) B*||Core Length (mm) C*||Lead Length (mm) D*||Lead Pitch (mm) E*||Lead Dia. (mm) F*||Total Flux (µWb)||AL Value (µH)|
|LB 4x2x8F||6.0 max||16.0 max||12.0 max||4.2 ± 0.5||14.0 ± 1.0||1.25 ± 0.1||4.8 min||16.0 min|
|LB 4x2x8U||6.0 max||20.0 max||12.0 max||4.2 ± 0.5||5.0 ± 1.0||1.25 ± 0.1||4.8 min||16.0 min|