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Power Supply

1.6kW, 80Plus Platinum Class, High efficiency Server AC-DC Power supply Reference Design

Overview

Power supply applications require power MOSFETs with high efficiency, small size and high reliability. Since the release of its first power MOSFET, Toshiba’s power MOSFETs have been widely used in various markets.

In response to the market demand, Toshiba has developed the new high-voltage DTMOS series, the low-voltage U-MOS series, and MOSFETs fabricated using a new material called silicon carbide 「SiC」 contributing to the energy-saving of power supplies.

Block Diagram by Power Supply

Switching Power Supply

Linear Power Supplies

Application

Documents

Whitepaper

Whitepaper
Name Outline Date of issue
Describes the features of the new package and an operation analysis using simulation 9/2017

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Describes the features of the DTMOSV series and the improvements from the previous series 9/2017

user registration

  • DTMOS Applications (Noise Reduction)
Describes the mechanism of noise generation and noise reduction techniques coming soon

Application Note

Application note
Name outline Date of issue
Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. 01/2018
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
describes how to calculate the temperature of discrete semiconductor devices. 12/2017
discusses temperature derating of the MOSFET safe operating area. 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

user registration

Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016

Catalog

Catalog
Name outline Date of issue
Describes the lineups of MOSFET 9/2017
Describes the lineups of power and small-signal MOSFETs by package 3/2016

Reference Design

Reference Design
Name Outline Date of issue
Describes an overview of the power supply, design reference documents, electronic files that can be imported into EDA tools, and an overview of the constituent devices 10/2017

Video


Contacts

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.