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Evolution of Wide-Bandgap Semiconductors for Power Devices Expanding Fields of Application

Evolution of Wide-Bandgap Semiconductors for Power Devices Expanding Fields of Application

Wide-bandgap semiconductors including silicon carbide (SiC) and gallium nitride (GaN) are currently attracting attention for use in next-generation power devices due to their excellent characteristics offering higher energy efficiency.

Toshiba Electronic Devices & Storage Corporation has been releasing a wide variety of SiC power devices, and are also developing GaN power devices capable of performing high-speed switching operations, including a quasi-normally-off GaN HEMT and GaN MOSFET.

 
*Toshiba Review (Vol.72, No.5, November 2017)

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