MT3S111

Not Recommended for New Design

Radio-frequency SiGe Heterojunction Bipolar Transistor

Description

Application Scope VHF/UHF band low noise, low distortion amplifier
Polarity NPN
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name S-Mini
Package Image S-Mini
JEITA SC-59
JEDEC TO-236MOD
Package Code SOT-346
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.5×1.1
Package Dimensions View
Land pattern dimensions View

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current IC 0.1 A
Collector power dissipation PC 160 mW
Collector power dissipation (mounted on board) PC 700 mW
Junction temperature Tj 150
Collector-emitter voltage VCEO 6 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Insertion Gain (Typ.) |S21|2 f=1GHz 12 dB
Transition frequency (Typ.) fT - 11.5 GHz
Noise Figure (Typ.) NF f=1GHz 0.9 dB

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