TPN2R503NC

EOL announced

Power MOSFET (N-ch single VDSS≤30V)

Description

Application Scope Power Management Switches
Polarity N-ch
Generation U-MOSⅧ
Internal Connection Single
RoHS Compatible Product(s) (#) Please contact us.

Package Information

Toshiba Package Name TSON Advance
Package Image TSON Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.3×0.85
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 85 A
Power Dissipation PD 35 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 4.1
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2.5
Input capacitance (Typ.) Ciss - 2230 pF
Total gate charge (Typ.) Qg VGS=10V 40 nC

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May,2016

Feb,2019

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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