TPN6R303NC

Power MOSFET (N-ch single VDSS≤30V)

Description

Application Scope Lithium-Ion Secondary Batteries / Power Management Switches
Polarity N-ch
Generation U-MOSⅧ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TSON Advance
Package Image TSON Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.3×0.85
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 43 A
Power Dissipation PD 19 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 8.4
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 6.3
Input capacitance (Typ.) Ciss - 1370 pF
Total gate charge (Typ.) Qg VGS=10V 24 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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May,2016

Feb,2019

Feb,2024

Dec,2023

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TPN6R303NC,LQ 3000 Yes

Technical inquiry

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Frequently Asked Questions

FAQs

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