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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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The battery built into the earphones is charged when they store the earphone case. Recently, people who are looking for true wireless earphones tend to emphasize "ultra-small". The smaller and lighter, the easier it is to keep in bags and pockets. Like earphones, the demand for smaller and lighter earphones is increasing. In order to reduce the size, the miniaturization of the system will increase as well as the risk of exposure to external noise and static electricity from the human body. Power supply required for charging comes from USB, but this is not an exception when the USB terminal is exposed to the outside or the charging terminal of each earphone.
To avoid these risks, Toshiba's high-IPP TVS diodes (ESD protection diodes) can be used to suppress from a few ns-order to ms-order ESD and transient voltages. In order to miniaturize the circuit due to the growing demand for smaller enclosures, those products have small packages. In order to miniaturize the circuit due to the growing demand for smaller enclosures, those products have small packages options. In addition, it has been certified for IEC61000-4 series, so it is possible to provide a simpler and stronger protective circuit than ever before.
MOSFET can be easily and reliably controlled to detect when the earphones are connected to the charger jacks and to turn on between charges. The need to reduce the power consumed by using MOSFET is also a critical issue in designing systems. By using Toshiba's low on-resistance and low-voltage drive MOSFET, the set's power consumption can be kept low, and these products can be mounted in small packages, which greatly contributes to a reduction in total system consumption and miniaturization.
TVS diode protects the device from surge voltage, such as the static electricity from the external terminal, or prevents malfunction of IC. High circuit protection performance is realized by original process technology.
Product Number |
Package (Width×Length×Height mm) |
Product Overview |
Checking On-line distributor inventory |
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SOD-962 (SL2) |
VESD=+/-10kV, VRWM=+/-5.5V(Max), CT=1.5pF(Typ.)(@VR=0V, f=1MHz), Rdyn=0.25Ω(Typ.) |
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SOD-962 (SL2) |
VESD=+/-30kV, VRWM=+/-5.5V(Max), CT=8.5pF(Typ.)(@VR=0V, f=1MHz), Rdyn=0.2Ω(Typ.) | ||
DF2S6P1CT | SOD-882 (CST2) |
VESD=+/-30kV, VRWM=5.5V(Max), CT=90pF(Typ.)(@VR=0V, f=1MHz), Rdyn=0.23Ω(Typ.) | ![]() |
By using MOSFET with low on-resistance and low voltage drive, the power consumption of the total system can be reduced. MOSFET’s small size package contributes miniaturization of set.
Product Number |
Package (Width×Length×Height mm) |
Product Overview |
Checking On-line distributor inventory |
---|---|---|---|
ES6 |
N-ch x 2, VDSS=20V, ID=800mA, RDS(ON)=235mΩ (Max)(@VGS=4.5V) |
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UDFN6 |
N-ch x 2, VDSS=20V, ID=4.0A, RDS(ON)=33mΩ (Max)(@VGS=4.5V) |
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CST3 |
N-ch, VDSS=20V, ID=1.4A, RDS(ON)=235mΩ (Max)(@VGS=4.5V) |