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用于汽车应用、采用SOP Advance(WF)封装的U-MOSIX-H系列40V N通道功率MOSFET:TPHR7904PB、TPH1R104PB

产品新闻2018年4月

The package photograph of 40 V N-channel power MOSFETs in the U-MOSIX-H series using the SOP Advance(WF) package for automotive applications: TPHR7904PB, TPH1R104PB.

“TPHR7904PB”和“TPH1R104PB”是用于汽车应用、采用小型低电阻SOP Advance(WF)封装的全新40V N通道功率MOSFET产品。
新产品因安装了我们的U-MOSIX-H系列芯片,采用具有最新沟槽结构的小型低电阻SOP Advance(WF)封装,所以具有低导通电阻特性,可降低导通损耗。相比于东芝电子元件及存储装置株式会社的前一代系列(U-MOSIV),U-MOSIX-H系列也降低了开关噪声,有助于降低EMI[1]
SOP Advance(WF)封装采用可焊锡侧翼端子结构[2]

注:
[1] EMI(电磁干扰)
[2] 可焊锡侧翼端子结构:允许对板上的安装进行自动光学检查的端子结构。

特点

  • SOP Advance(WF)封装降低了全新U-MOSIX-H系列产品的导通电阻。
      RDS(ON)=0.79mΩ(最大值)@VGS=10V(TPHR7904PB)
      RDS(ON)=1.14mΩ(最大值)@VGS=10V(TPH1R104PB)
  • 低噪声特性降低了[1]
  • 小型低电阻封装的可焊锡侧翼端子结构[2]

应用

  • 电动助力转向(EPS)
  • 负载开关
  • 电动泵

产品规格

(@Ta=25°C)

器件型号 最大绝对
额定值
漏极-源极
导通电阻
RDS(ON)最大值
(mΩ)
内置
栅源
齐纳
二极管
系列 封装
漏极-
源极
电压
VDSS
(V)
漏极
电流
(DC)
ID
(A)
@VGS
=6V
@VGS
=10V
TPHR7904PB 40 150 1.3 0.79
No U-MOSIX-H SOP Advance(WF)
TPH1R104PB 120 1.96 1.14

内部电路

The illustration of internal circuit of 40 V N-channel power MOSFETs in the U-MOSIX-H series using the SOP Advance(WF) package for automotive applications: TPHR7904PB, TPH1R104PB.

应用电路实例

The illustration of application circuit example of 40 V N-channel power MOSFETs in the U-MOSIX-H series using the SOP Advance(WF) package for automotive applications: TPHR7904PB, TPH1R104PB.

本文所示应用电路仅供参考。需要进行全面评估,特别是在量产设计阶段。东芝电子元件及存储装置株式会社提供这些应用电路实例并不表示提供了任何的工业产权许可。

端子的显微照片

The illustration of photomacrograph of a terminal of 40 V N-channel power MOSFETs in the U-MOSIX-H series using the SOP Advance(WF) package for automotive applications: TPHR7904PB, TPH1R104PB.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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