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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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适用于电源电路的碳化硅器件

SiC肖特基二极管(SBD)实现了Si材料难以实现的高击穿电压,显著降低了Si-FRD(快速恢复二极管)等p-n结二极管无法实现的反向恢复时间(电荷)。
通过采用改进的JBS结构,我们的产品改善了SBD的泄漏电流和浪涌电流(这些都是SBD的不利条件)。
如下表所示,SiC实现了用Si二极管难以实现的电源电路所需的各种特性。 

电气特性和符号
(改进方向)
对电路的影响 Si材料 SiC材料
FRD* SBD SBD

SBD
(改进JBS结构)

反向电压,VR
(高)
开关过程中的电压浪涌 ★★★★ ★★★★★ ★★★★★
泄漏电流,IR
(低)
热击穿 ★★ ★★★ ★★★★★
正向电压,VF
(低)
对效率有相当大的影响 ★★★ ★★★★★ ★★★ ★★★
反向恢复时间,trr
(低)
对效率有相当大的影响 ★★★★★ ★★★★★ ★★★★★
浪涌电流,IFSM
(大)
合闸涌流

★★★★★

★★ ★★★

★数越多越好。

* FRD:快速恢复二极管

SiC肖特基二极管

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