通过内置MOSFET的多芯片模块提高效率和电流
多芯片模块产品使用带有内置体二极管的MOSFET，具有快速反向恢复时间（trr），适用于电机。与正弦波驱动的传统产品相比，最新产品将损耗降低约38%，获得了高效率。我们的产品采用20×14.2×2.2mm的小型贴片封装（SSOP30），额定电流为5A。此外，每相的源端被单独分开。将它们与我们的微控制器（MCU）和电机驱动IC（MCD）相结合，我们可以通过三分流器法来处理无传感器控制，比如矢量控制。
最新产品的导通电阻很低，且配备了一个具有600伏击穿电压的超结MOSFET（SJMOS）和一个内置体二极管（HSD：高速二极管），具有快速反向恢复时间（trr），现已经上市多年。结果，正弦波驱动与传统产品相比约为1.8W（@输入功率＝40W），效率高，减少损耗约38%。
多芯片模块3相直流无刷电机驱动IC
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