在双极性输出与双扩散金属氧化物半导体（DMOS）输出之间实现低导通电阻
在输出阶段使用双扩散金属氧化物半导体（DMOS）场效应晶体管（FET），实现高效率和高输出电流。
自发明起，双极型晶体管40年来广泛用于各类应用。双极型晶体管需要大输入电流，因此有时需由辅助电路驱动双极型晶体管。
相较于双极型晶体管阵列，新型双扩散金属氧化物半导体（DMOS）场效应晶体管（FET）阵列所需的输入电流明显更低，因此更便于直接连接微控制器（MCU）。此外，DMOS FET晶体管阵列由于输入阶段的导通电阻减小，因此可承受更高的电压且耗电量更低。
- 与东芝先前的产品系列相比，这款产品的功率损耗大约降低了40%（Ta＝25°C，输出电流＝200mA）。
- 低输入电流：0.1mA（最大值）（输入电压＝3V）
- 输出阶段的绝对最大额定值（TBD62064A与TBD62308A系列）
- 输出击穿电压：50V
- 输出电流（最大值）：1.5A
- 输出击穿电压：50V
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