TPCA8053-H

停产产品

Power MOSFET (N-ch single 30V<VDSS≤60V)

全部 Data sheet 应用说明 Other

数据表

TPCA8053-H 数据表/日文[Nov,2013]PDF: 300KB

数据表

TPCA8053-H 数据表/英文[Nov,2013]PDF: 210KB

Simulation Model

PSpice Model[Dec,2016]ZIP: 3KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Catalog

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Catalog

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Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

数据表

TPCA8053-H 数据表/日文[Nov,2013]PDF: 300KB

数据表

TPCA8053-H 数据表/英文[Nov,2013]PDF: 210KB

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MOSFET SPICE model grade[May,2023]PDF: 1639KB

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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The thermal stability and thermal design:Bipolar Transistor Application Notes[Mar,2021]PDF: 525KB

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The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes[Jan,2021]PDF: 513KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

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Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Dec,2016]ZIP: 3KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

Application Scope	DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity	N-ch
Generation	U-MOSⅥ-H
Internal Connection	Single
RoHS Compatible Product(s) (#)	Available

Application Scope

DC-DC Converters / Switching Voltage Regulators / Motor Drivers

Polarity

N-ch

Generation

U-MOSⅥ-H

Internal Connection

Single

RoHS Compatible Product(s) (#)

Available

器件型号	兼容性	备注
TPH14006NH	Almost same package but similar characteristics	Different drive voltage
TPH9R506PL	Almost same package but similar characteristics	Slightly lower ON resistance

器件型号

兼容性

备注

TPH14006NH

Almost same package but similar characteristics

Different drive voltage

TPH9R506PL

Almost same package but similar characteristics

Slightly lower ON resistance

封装

Toshiba Package Name	SOP Advance
Package Image
Pins	8
Mounting	Surface Mount
Width×Length×Height (mm)	5.0×6.0×0.95
Package Dimensions	查看
Land pattern dimensions	查看
CAD data (Symbol, Footprint and 3D model)	Download from UltraLibrarian^® in your desired CAD format (Note)

Please refer to the link destination to check the detailed size.

(Note) Ultra Librarian^® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

项目	符号	值	单位
Drain-Source voltage	V_DSS	60	V
Gate-Source voltage	V_GSS	+/-20	V
Drain current	I_D	15	A
Power Dissipation	P_D	30	W

项目

符号

值

单位

Drain-Source voltage

V_DSS

Gate-Source voltage

V_GSS

+/-20

Drain current

I_D

Power Dissipation

P_D

项目	符号	条件	值	单位
Gate threshold voltage (Max)	V_th	-	2.3	V
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4.5V	24	mΩ
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	22.3	mΩ
Input capacitance (Typ.)	C_iss	-	1620	pF
Total gate charge (Typ.)	Q_g	V_GS=10V	25	nC

项目

符号

条件

值

单位

Gate threshold voltage (Max)

V_th

2.3

Drain-Source on-resistance (Max)

R_DS(ON)

|V_GS|=4.5V

mΩ

Drain-Source on-resistance (Max)

R_DS(ON)

|V_GS|=10V

22.3

mΩ

Input capacitance (Typ.)

C_iss

1620

Total gate charge (Typ.)

Q_g

V_GS=10V

Notes

The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.
(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.
The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.
Please contact your Toshiba sales representative for detailed environmental information about each specific part number or product, such as RoHS compatibility or material content. Please use Toshiba products only in compliance with all applicable laws and regulations concerning the inclusion or use of controlled substances, including without limitation the RoHS Directive.TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

Reliability data are provided for your reference only, please contact your Toshiba sales representative for detailed reliability information about each part number.

For product delivery, additional characters will be added to the part numbers shown on this website. For details, please ask your local distributor, or send an inquiry accessed from "Contact Us" on this website.

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