先进的双扩散MOSFET（D-MOS）π-MOSIX系列产品
π-MOS系列采用D-MOS（双扩散MOS）结构，且该系列提供从200V到900V的宽电压范围，其中我们提供最新的第九代π-MOSⅨ系列600V耐压产品。
π-MOSⅨ系列能够取代市场上较为普遍的传统的600V MOSⅦ系列产品。我们优化了双扩散结构的设计，实现了高效率、低噪声和高雪崩性能。
通过优化芯片设计，我们的π-MOSⅨ系列能够达到与传统π-MOSⅦ系列和竞争对手同类产品相同的功率转换效率水平，同时降低EMI噪声。因此，在设计诸如适配器之类的开关电源时，可以在不改变MOSFET以外的外围部件的情况下获得与传统产品相同的特性，从而轻松替换传统产品。
在评估65W笔记本电脑电源适配器的电磁干扰（辐射）噪声时，与我们传统的π-MOSⅦ系列同等产品TK10A60D（600V／0.75Ω最大值／TO-220SIS封装）相比，π-MOSⅨ系列的TK750A60F在不改变MOSFET外围电路参数（漏源间电容、栅极串联电阻等）的情况下降低了辐射噪声。
DTMOSⅥ系列MOSFET
电路仿真
利用开关电源选型工具库（SMPS Lib.），您可以根据实际需求选择和下载电源单元的各种基本拓扑，以便在仿真环境中验证MOSFET的性能。
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