TPCA8125

停产产品

Power MOSFET (P-ch single)

全部 Data sheet 应用说明 Other

数据表

TPCA8125 数据表/日文[Feb,2014]PDF: 388KB

Simulation Model

PSpice Model[Jan,2016]lib: 3KB

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The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes[Jan,2021]PDF: 513KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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Catalog

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Catalog

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Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

数据表

TPCA8125 数据表/日文[Feb,2014]PDF: 388KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

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The thermal stability and thermal design:Bipolar Transistor Application Notes[Mar,2021]PDF: 525KB

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The maximum ratings:Bipolar Transistor Application Notes[Mar,2021]PDF: 615KB

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The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes[Jan,2021]PDF: 513KB

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The terms used in data sheets:Bipolar Transistor Application Notes[Jan,2021]PDF: 546KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jan,2016]lib: 3KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

Application Scope	Motor Drivers / Switching Voltage Regulators
Polarity	P-ch
Generation	U-MOSⅥ
Internal Connection	Single
RoHS Compatible Product(s) (#)	Available

Application Scope

Motor Drivers / Switching Voltage Regulators

Polarity

P-ch

Generation

U-MOSⅥ

Internal Connection

Single

RoHS Compatible Product(s) (#)

Available

器件型号	兼容性	备注
XPH13016MC	Almost same package but similar characteristics	Slightly lower ON resistance
TJ30S06M3L	Almost same characteristics but different package	Slightly lower ON resistance

器件型号

兼容性

备注

XPH13016MC

Almost same package but similar characteristics

Slightly lower ON resistance

TJ30S06M3L

Almost same characteristics but different package

Slightly lower ON resistance

Toshiba Package Name	SOP Advance
Package Image
Pins	8
Mounting	Surface Mount
Width×Length×Height (mm)	5.0×6.0×0.95
Package Dimensions	查看
Land pattern dimensions	查看

Toshiba Package Name

SOP Advance

Package Image

Pins

Mounting

Surface Mount

Width×Length×Height
(mm)

5.0×6.0×0.95

Package Dimensions

查看

Land pattern dimensions

查看

项目	符号	值	单位
Drain-Source voltage	V_DSS	-60	V
Gate-Source voltage	V_GSS	+10/-20	V
Drain current	I_D	-25	A
Power Dissipation	P_D	55	W

项目

符号

值

单位

Drain-Source voltage

V_DSS

-60

Gate-Source voltage

V_GSS

+10/-20

Drain current

I_D

-25

Power Dissipation

P_D

项目	符号	条件	值	单位
Gate threshold voltage (Max)	V_th	-	-3.0	V
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	25.5	mΩ
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=6V	34.4	mΩ
Input capacitance (Typ.)	C_iss	-	3650	pF
Total gate charge (Typ.)	Q_g	V_GS=-10V	78	nC

项目

符号

条件

值

单位

Gate threshold voltage (Max)

V_th

-3.0

Drain-Source on-resistance (Max)

R_DS(ON)

|V_GS|=10V

25.5

mΩ

Drain-Source on-resistance (Max)

R_DS(ON)

|V_GS|=6V

34.4

mΩ

Input capacitance (Typ.)

C_iss

3650

Total gate charge (Typ.)

Q_g

V_GS=-10V

Notes

The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.
(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.
The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.
Please contact your Toshiba sales representative for detailed environmental information about each specific part number or product, such as RoHS compatibility or material content. Please use Toshiba products only in compliance with all applicable laws and regulations concerning the inclusion or use of controlled substances, including without limitation the RoHS Directive.TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
Reliability data are provided for your reference only, please contact your Toshiba sales representative for detailed reliability information about each part number.
For product delivery, additional characters will be added to the part numbers shown on this website. For details, please ask your local distributor, or send an inquiry accessed from "Contact Us" on this website.

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