TPCP8407

不推荐用于新设计

Power MOSFET (N-ch + P-ch complementary)

数据表

TPCP8407 数据表/日文[Feb,2016]PDF: 503KB

数据表

TPCP8407 数据表/英文[Feb,2016]PDF: 379KB

Simulation Model

PSpice Model[Sep,2016]ZIP: 2KB

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Catalog

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数据表

TPCP8407 数据表/日文[Feb,2016]PDF: 503KB

数据表

TPCP8407 数据表/英文[Feb,2016]PDF: 379KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

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Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Sep,2016]ZIP: 2KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

产品概要

Application Scope Motor Drivers / Mobile Equipments
Polarity N-ch + P-ch
Generation U-MOSⅣ / U-MOSⅥ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

封装

Toshiba Package Name PS-8
Package Image PS-8
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 2.9×2.8×0.8
Package Dimensions 查看
Land pattern dimensions 查看
CAD data
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

 Please refer to the link destination to check the detailed size.

 (Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage (Q1) VDSS 40 V
Gate-Source voltage (Q1) VGSS +/-20 V
Drain current (Q1) ID 5.0 A
Drain-Source voltage (Q2) VDSS -40 V
Gate-Source voltage (Q2) VGSS +10/-20 V
Drain current (Q2) ID -4.0 A
Power Dissipation PD 1.77 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Q1) (Max) Vth - 3.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=6V 62.8 mΩ
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=10V 36.3 mΩ
Input capacitance (Q1) (Typ.) Ciss - 505 pF
Total gate charge (Q1) (Typ.) Qg VGS=10V 11.8 nC
Gate threshold voltage (Q2) (Max) Vth - -3.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 56.8 mΩ
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-6V 82.2 mΩ
Input capacitance (Q2) (Typ.) Ciss - 810 pF
Total gate charge (Q2) (Typ.) Qg VGS=-10V 18 nC

文档

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Sep,2016

应用

Mega-solar Inverters
Such as high efficiency and miniaturization are important in designing mega-solar inverter. Toshiba provides information on a wide range of semiconductor products suitable for inverter circuit unit, gate driving circuit unit, signal transmission unit, etc., along with circuit configuration examples.
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