Contact us

A new window will open A new window will open

Bipolar Transistors


Bipolar Transistors/IGBTs/IEGT

Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices.

An injection-enhanced gate transistor (IEGT) is a voltage-driven device for switching large current. IEGTs are ideal for industrial motor control applications that support today’s social infrastructure, including industrial drive systems and power converters.


Bias Resistor Built-in Transistors (BRT)


Multi-Chip Discrete Devices

Junction FETs

RF Bipolar


To Top
·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.