Contact us

Es wird ein neues Fenster geöffnet Es wird ein neues Fenster geöffnet

Toshiba Unveils SOI Process Achieving the Lowest-class Insertion Loss in the Industry for RF Switches in Smartphones

20th November 2015

Samples fabricated with the next generation TaRF8 process to be available in January

Toshiba Electronics Europe has announced the development of a next generation TarfSOI™ (Toshiba advanced RF SOI) process optimised for radio-frequency (RF) switch applications. RF switch ICs, fabricated using the new TaRF8 process such as the new SP12T[1] process, achieve the lowest-class[2] of insertion loss[3] in the industry. Sample shipments of SP12T RF switch ICs fabricated with the new process will start in January 2016.

Designed for use in smartphones, the SP12T RF switch IC features an integrated MIPI-RFFE[4] controller for mobile applications. The device is suitable for use in devices compliant with 3GPP GSM, UMTS, W-CDMA, LTE and LTE-Advanced[5] standards.

Products utilising the new TaRF8 SOI-CMOS[6] TarfSOI front-end process achieve the lowest-class insertion loss in the industry, 0.32dB at 2.7GHz. Compared with products using Toshiba’s current TaRF6 process, insertion loss is improved by 0.1dB while maintaining the same level of distortion characteristics.

With the trend in mobile communications towards high data rate, high-capacity data transfers, RF switch ICs used in mobile devices and smartphones, require multi-port support and improved RF performance. Lowering insertion loss is recognised as a particularly important factor in this, as it decreases RF transmission power loss, which can support a longer battery life for mobile devices.

Toshiba is developing high-performance RF switch ICs utilising its in-house fab to apply SOI-CMOS technology, which is suitable for integrating analogue and digital circuits. By handling all aspects of the production flow, from RF process technology development to the design and manufacturing of RF switch chips, Toshiba can swiftly improve SOI-CMOS process technology in response to feedback from the development results of its own RF switch IC products. This Integrated-Device-Manufacturer (IDM) approach allows Toshiba to quickly establish new process technologies suited to actual products and to enter the market with products fabricated with the latest process technology.

Toshiba will continue improving the performance of its TarfSOI process technology and work towards meeting customer and market requirements for RF switch ICs by introducing cutting-edge technology products ahead of other manufacturers.

6812_CHART Click to enlarge

Notes:

[1] Single Pole Twelve Throw Switch

[2] Power loss that occurs when an RF signal is transmitted through the switch, expressed in decibels (dB).

[3] In the RF switch IC market as of November 20, 2015. Toshiba survey

[4] A serial bus interface specification for the control of RF components for mobile devices, standardized by the RF Frontend (RFFE) Working Group of the MIPI (Mobile Industry Processor Interface) Alliance.

[5] Mobile communication standards specified by the 3GPP (3rd Generation Partnership Project).

[6] Technology to reduce parasitic capacitance by using an insulation layer under the channel of the MOSFET. SOI: Silicon-On-Insulator

* TarfSOI is a trademark of Toshiba Corporation.

News Links

       

   

To Top
·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.