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MOSFET Product lineup

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12 V – 300 V MOSFETs

(Drain-Source On-Resistance vs. Gate Switch Charge)
Example of Continual Figure-of-Merit Improvement
(Drain-Source On-Resistance vs. Gate Switch Charge)

Toshiba offers an extensive portfolio of low- to medium-VDSS MOSFETs in various packages ranging from ultra-small packages for small-signal applications to packages with a large current capacity for automotive applications. Toshiba has used each successive generation of trench-gate structures and fabrication processes to steadily reduce the drain-source on-resistance, RDS(ON), of its low-voltage power MOSFETs. In addition, Toshiba has continually optimized MOSFET cell structures to improve the trade-offs between drain-source on-resistance and charge characteristics, which are important figures of merit of MOSFETs for switching applications.

In order to help improve the efficiency of application systems and reduce the heat generated by MOSFETs, Toshiba has continually improved various figures of merit of MOSFETs as shown at right. In addition, Toshiba’s Gen-8 trench MOSFET series, U-MOSVIII-H, generate even lower noise and ringing during switching transitions due to the use of a new cell structure.

<Comparison of Drain-Source Voltage Waveforms during Switch-Off Operation>

Parasitic Snubber Circuitlvmos_3

As switching losses decrease, the relative importance of the output charge loss has increased. In response, Toshiba has released the Gen-9 U-MOSIX-H trench MOSFET series fabricated using the latest process that provides much lower output charge loss than the previous series.

Toshiba’s low-voltage power MOSFETs are perfectly suited to improving the energy efficiency and reducing the size of various applications. Toshiba offers a wide range of MOSFET options, allowing you to select the ones that best meet your application needs.

Highlight

  • Die neueste U-MOSⅨ-H-Serie

    Die U-MOSⅨ-H-Serie wurde speziell für synchrone Gleichrichtungsanwendungen wie der sekundären SIE isolierter Schaltstromversorgungen entwickelt. Sie überzeugt durch eine verbesserte Qoss*1-Leistung, einer der Ursachen für den Leistungsverlust bei synchroner Gleichrichtung. Die U-MOSⅨ-H-Serie weist einen um 27 % reduzierten Ron-Qoss auf: Bei den Abstimmungseigenschaften zwischen Durchlasswiderstand (Ron) und Qoss ist sie den neusten Produkten anderer Halbleiteranbieter überlegen*2. Da der Ron erhebliche Auswirkungen auf den Qoss hat, erweitert Toshiba das U-MOSⅨ-H-Portfolio duch MOSFETs mit ultraniedrigem RON als Ergänzung zum Portfolio der U-MOSⅧ-H-Serie.

◆Comparisons of figures of merit of typical MOSFETs with VDSS=100 V

Conduction and

drive losses

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Conduction and

switching losses

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Conduction and
output charge losses

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TPH3R70APL:U-MOSⅨ-H、VDSS=100V、RDS(ON)max= 3.7mΩ at VGS=10V、SOP Advance

RDS(ON):On-resistance (figure of merit for conduction loss)            As of January 2018 (as surveyed by Toshiba)
Qg:Gate charge (figure of merit for drive loss)
Qsw:Gate switch charge (figure of merit for switching loss)
Qoss:Output charge (figure of merit for output charge loss)

◆Application example for the MOSFET series with VDSS=100 V and comparisons of MOSFET performance in an application system

Due to its outstanding speed, the 100-V MOSFETs of the U-MOSIX-H series are used for various applications, including DC-DC converters, server power supplies, adapters, motors, micro-inverters, and chargers. An example of a full-bridge DC-DC converter is shown below. The following compares Toshiba’s 100-V U-MOSIX-H MOSFET and a MOSFET from another company in terms of the efficiency and the MOSFET device temperature of its primary side. As demonstrated below, Toshiba’s U-MOSIX-H series helps reduce the MOSFET device temperature and improve the power efficiency of the DC-DC converter.

<Comparison of Efficiency of Full-Bridge DC-DC Converter and MOSFET Device Temperature>

lvmos_en4

<Operating conditions>
 Input voltage = 48 V,output voltage = 24 V

   output power = 25 to 185 W

   operating frequency = 150 kHz

   MOSFET gate drive voltage = 6 V

 <Device evaluated>
 TPH3R70APL:RDS(ON)max= 3.7mΩ at VGS=10V
                             SOP Advance

 Circle Device compared with the TPH3R70APL

Efficiency

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Device Temperature

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*At the center of the package mold surface

2)VDSS ≦60V

The Gen-9 U-MOSIX-H series is fabricated with a further optimized cell structure and even smaller process geometries than the Gen-8 MOSFET series featuring low switching and drive losses. Consequently, the U-MOSIX-H series provides much lower output charge and switching losses, which are important for power supply and motor drive applications.

◆Comparisons of figures of merit of typical MOSFETs with VDSS=60V

Conduction and

drive losses

lvmos-highlight_en7

Conduction and

switching losses

lvmos-highlight_en8

Conduction and
output charge losses

lvmos-highlight_en9

TPH1R306PL:U-MOSⅨ-H、VDSS=60V、RDS(ON)max= 1.34mΩ at VGS=10V、SOP Advance

RDS(ON):On-resistance (figure of merit for conduction loss)            As of January 2018 (as surveyed by Toshiba)
Qg:Gate charge (figure of merit for drive loss)
Qsw:Gate switch charge (figure of merit for switching loss)
Qoss:Output charge (figure of merit for output charge loss)

◆Application example for the MOSFET series with VDSS=60V and comparisons of MOSFET performance in an application system

In addition to 100-V MOSFETs, the 60-V MOSFETs of the U-MOSⅨ-H series are used for various applications including the secondary side of AC-DC power supplies for communication equipment and base stations, DC-DC converters for communication equipment, server power supplies, motors, and micro-inverters. Like the 100-V MOSFETs, the 60-V MOSFETs of the U-MOSIX-H series help reduce the MOSFET device temperature and improve the power efficiency of a full-bridge DC-DC converter.

lvmos_en10

<Operating conditions>
 Input voltage=48V

   output voltage=24V

   output power =5~25 A

   operating frequency=160kHz

   MOSFETgate drive voltage=6V

 <Device evaluated:>
 TPH1R306PL:RDS(ON)max= 1.34mΩ at VGS=10V,
                          SOP Advance

 Circle Device compared with the TPH1R306PL

Efficiency

lvmos-highlight_en12

Device Temperature

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* At the center of the package mold surface

3)Wide channel and storage temperature ranges of up to 175°C

The MOSFETs of the U-MOSIX-H series, including those with a VDSS of 30 V, are guaranteed at a channel temperature of up to 175°C and over a storage temperature range from -55°C to 175°C.

  • U-MOSVIII-H Series

The high-performance U-MOSVIII-H series combines low on-resistance and high switching speed. The U-MOSVIII-H series helps reduce switching losses in the high-frequency region and therefore improve the efficiency of power supplies. Like the U-MOSIX-H series, the parasitic RC snubber in the U-MOSVIII-H series helps reduce switching noise. In addition, the U-MOSVIII-H series is available with a VDSS of 30 to 250 V and in various packages including the state-of-the-art double-sided-cooling packages (see the table below).

U-MOSⅧ‐H世代とU-MOSⅨ‐H世代のカバレージ比較

Comparison of Coverage of the U-MOSVIII-H and U-MOSIX-H Series

*1 Qoss: Ausgangsladung (Drain-Source-Ladung)

*2 Bei Vergleich eines 40-V-MOSFETs in einem entsprechenden Gehäuse (Stand: Dezember 2014, gemäß Umfrage von Toshiba).

  • U-MOSⅧ-H-Serie

    Die U-MOSⅧ-H-Serie stellt das branchenweit umfassendste Portfolio von MOSFETs mit geringem Durchlasswiderstand und dem besten Verhältnis von der Erhöhung des Durchlasswiderstands zur Kapazität dar. Aufgrund ihres schnellen Betriebs trägt die U-MOSⅧ-H-Serie zur Reduzierung des Schaltverlusts und damit zur Erhöhung der Stromversorgungseffizienz bei. Die U-MOSⅧ-H-Serie ist mit VDSS  zwischen 30 und 250 V und in verschiedenen Ausführungen erhältlich, darunter modernste Pakete mit doppelseitiger Kühlfunktion.

  • Niedrige Betriebsspannung und niedriger Ron.

    Toshiba kann dank des branchenführenden Prozesses und des geringen Energieverbrauchs selbst für Niederspannungsprodukte einen niedrigen Ron realisieren und somit dem Abwärtstrend der Systemleistung folgen.

lvmos1e

  • Gehäusetrends bei 12-300V-MOSFETs

    Gehäusetrends bei 12-300V-MOSFETs

    TOSHIBA bietet Gehäuse für jeden Zweck an, von sehr kleinen Gehäusen mit Maßen von nur 0,8x0,6 mm bis hin zu strahlungsresistenten Gehäusen.

  • Thermally Enhanced DSOP Advance Package

    1. The DSOP Advance package efficiently dissipates heat from the metal plates on the top and bottom surfaces.

        ⇒ The DSOP Advance package provides a higher current capacity than the conventional package with the same size and therefore helps save PCB space and reduce the system size.

    2. The DSOP Advance package is footprint-compatible with the SOP Advance package.

        ⇒ MOSFETs in the DSOP Advance package serve as easy replacements for those in the SOP Advance package without the need for modifying the PCB layout.

    3. The DSOP Advance package has lower resistance.

    DSOP Advance PackageDouble Side Cooling Package

  • Paketentwicklungen bei Stromversorgungs-MOSFETs

    • Keine Wärmebildung mehr auf oberen und unteren Oberflächen.
    • Die obere Metallplatte ist an die Quelle angeschlossen.
      (Die Quelle kann nicht als Elektrode zur Leitung des elektrischen Stroms fungieren. Verwenden Sie sie nur zur Wärmeableitung.
    • Gleiche Stellfläche wie bei bisherigem SOP Advance
      (SOP Advance kann durch das neue Paket ersetzt werden, ohne das vorhandene PCB-Layout zu ändern.)

  • Gehäuse für Hochstrom

    • Steigerung der Stromdichte und des Ron aufgrund der Cu-Klemme.
    • Der Footprint des Hochspannungsgehäuses entspricht dem des allgemeinen Gehäuses.

    Gehäuse für Hochstrom

    Hochstromtyp Allgemeiner Typ
    TO-220SM(W) TO-220SM(D2PAK)
    DPAK+ Neue PW-Form
    SOP Advance SOP-8

    TO-220SM(W)、DPAK+、SOP Advance

Portfolio

Dokumente

Whitepaper

Whitepaper
Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products
8/2017

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Optimising power design through MOSFET efficiency and intergration 8/2017

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Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors 9/2017

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Dual side cooling package DSOP Advance: Thermal conductance innovation for power-MOSFET 8/2017

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Anwendungshinweise

Application note
Name outline Date of issue
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

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describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016
Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017

Katalog

Catalog
Name outline Date of issue
Describes the lineups of power and small-signal MOSFETs by package 3/2016

Video


Produkte

VDSS
(V)
RDS(ON)
TSON Advance SOP Advance DSOP Advance TO-220 TO-220SIS DPAK D2PAK
30 10 – 20 TPN11003NL TPH11003NL
5 – 10 TPN8R903NL
TPN6R003NL
TPH8R903NL
TPH6R003NL
3 – 5 TPN5R203PL
TPN4R303NL
TPH4R803PL
TPH4R003NL
TPH3R203NL
1 – 3 TPN2R903PL
TPN2R703NL
TPN1R603PL
TPH3R003PL
TPH2R903PL
TPH2R003PL

TPH1R403NL
< 1 TPHR9203PL
TPHR9003NL
TPHR6503PL
TPWR8503NL
TPWR6003PL
40 10 – 20
5 – 10 TPN7R504PL TPH7R204PL
TPH6R004PL
3 – 5 TPN3R704PL TPH3R704PC
TPH3R704PL
TK3R1E04PL TK3R1A04PL TK3R1P04PL
1 – 3 TPN2R304PL TPH2R104PL
TPH1R204PB
TPH1R204PL
< 1 TPHR8504PL TPWR8004PL
45 1 – 3 TPN2R805PL TPH2R805PL
TPH1R405PL
TPH1R005PL
< 1 TPW1R005PL
60 20 – 50 TPN22006NH
10 – 20 TPN14006NH
TPN11006NL
TPN11006PL
TPH14006NH
TPH11006NL
TK30E06N1
TK40E06N1
TK30A06N1
TK40A06N1
5 – 10 TPN7R506NH
TPN7R006PL
TPH9R506PL
TPH7R506NH
TPH7R006PL
TPH5R906NH
TK8R2E06PL
TK58E06N1
TK5R1E06PL
TK8R2A06PL
TK58A06N1
TK5R3A06PL
TK6R7P06PL
3 – 5 TPN4R806PL TPH4R606NH
TPH3R506PL
TK4R3E06PL
TK3R2E06PL
TK4R3A06PL
TK3R3A06PL
TK4R4P06PL
1 – 3 TPH2R306NH
TPH2R506PL
TPH1R306PL
TPW1R306PL TK100E06N1 TK100A06N1
75 1 – 3 TPH2R608NH TPW2R508NH
80 30 – 50 TPN30008NH
10 – 20 TPN13008NH TPH12008NH TK35E08N1 TK35A08N1
5 – 10 TPH8R008NH TK46E08N1 TK46A08N1
3 – 5 TPH4R008NH TPW4R008NH TK72E08N1
TK100E08N1
TK72A08N1
TK100A08N1
100 30 – 50 TPN3300ANH
10 – 20 TPN1600ANH
TPN1200APL
TPH1400ANH TK22E10N1 TK22A10N1
5 – 10 TPH8R80ANH
TPH6R30ANL
TK34E10N1
TK40E10N1
TK34A10N1
TK40A10N1
3 – 5 TPH4R50ANH
TPH4R10ANL
TPH3R70APL
TPW4R50ANH TK65E10N1
TK100E10N1
TK65A10N1
TK100A10N1
TK65G10N1
120 10 – 20 TK32E12N1 TK32A12N1
5 – 10 TK42E12N1
TK56E12N1
TK42A12N1
TK56A12N1
3 – 5 TK72E12N1 TK72A12N1
150 50 – 100 TPN5900CNH TPH5900CNH
20 – 50 TPH3300CNH
10 – 20 TPH1500CNH TPW1500CNH
200 100 – 200 TPN1110ENH TPH1110ENH
50 – 100 TPH6400ENH
20 – 50 TPH2900ENH TPW2900ENH
250 200 – 300 TPN2010FNH TPH2010FNH
100 – 200 TPH1110FNH
50 – 100 TPH5200FNH TPW5200FNH
Parametrische Suche

MOSFET-Produktportfolio
Durchsuchen Sie das gesamte MOSFET-Produktangebot nach der passenden Baugruppe für Ihre Spezifikation.

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.