9 May 2017
Toshiba BiCS FLASH 64-layer 3D technology offers high performance and endurance designed for client, data center and enterprise SSDs
Düsseldorf, Germany, 09 May 2017 - Toshiba Electronics Europe (TEE) has announced Toshiba’s debut demonstration of the new 64-layer BiCS FLASH™ 3D technology on an XG Series client Non-Volatile Memory Express™ (NVMe™) Peripheral Component Interconnect Express® (PCIe®) SSD at Dell EMC World 2017, taking place from 8-11 May in Las Vegas. Toshiba’s latest BiCS FLASH delivers a mature combination of performance, cost and endurance for all SSD types.
BiCS FLASH is a three-dimensional (3D) flash memory stacked cell structure suitable for applications that require high capacity and performance, such as enterprise and consumer SSDs. The 512 gigabit (GB) (64 gigabyte), 64-layer device with 3-bit-per-cell (TLC) technology was recently added to Toshiba’s BiCS FLASH memory product line. The new BiCS FLASH is based on the third generation 64-layer stacking process featuring 65 percent greater bit density per mm2 than Toshiba’s 48-layer, 256GB (32 gigabyte) device. The new XG Series SSD is an ideal platform to launch the 64-layer flash memory, due to the product’s broad adoption, maturity and robustness, honed over multiple generations of PCIe/NVMe client SSD product releases.
“The future of SSDs is 3D,” said Greg Wong, Founder and Principal Analyst of Forward Insights. “3D flash memory is enabling the production of higher capacity and more cost effective SSDs to better meet a variety of requirements across the consumer and enterprise spaces.”
Toshiba is currently migrating all client, data center and enterprise SSDs to the newest BiCS FLASH 64-layer 3D memory. This migration sets Toshiba up for extending their recent recognition by IDC as the fastest growing storage device vendor in the $17 billion solid state drive (SSD) segment for 2016.
For more information on Toshiba’s line of SSDs, please visit: http://toshiba.semicon-storage.com/eu/product/storage-products.html
 BiCS FLASH is a trademark of Toshiba Corporation.
 NVMe and NVM Express are trademarks of NVM Express, Inc.
 PCIe and PCI Express are registered trademarks of PCI-SIG.
 A structure stacking flash memory cells vertically on a silicon substrate to realize significant density improvements over planar NAND flash memory, where cells are formed on the silicon substrate.
 Toshiba defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1TB = 240 = 1,099,511,627,776 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary
 Worldwide Solid State Storage Quarterly Update, CY 4Q16 (Feb 2017 - Doc # US41259317); in 2016 over 2015, as measured by revenue and units. 2015 revenue and unit baseline includes separate results from companies merged with non-affiliate third-party companies in 2016.