TC35678

Ultra-Low Current Single-Chip Controller for Bluetooth Low Energy (4.2) With Built-In Flash ROM

The TC35678 achieves class-leading low current consumption and incorporates 256 KB of built-in Flash ROM to store user programs and data in stand-alone operations. This built-in Flash ROM eliminates the need for an external EEPROM and contributes to reductions in both cost and mounting-area. TC35678 is available in both QFN40 and QFN60 packages. The QFN60 package extends the number of general purpose IO from 16 to 32 making it suitable for use in equipment such as keyboards and remote controls that require a large number of control pins. Supporting the Bluetooth Low Energy (BLE) 4.2 standard the TC35678 is suitable for ultra-low power portable products and comes with embedded BLE stack and GATT profile.

Toshiba Bluetooth® Silicon and Software Brochure (pdf 4.9MB)

Key Benefits

Flexible system architectures through:
- Embedded Bluetooth profile model (API over host UART)
- Stand alone model (with embedded Bluetooth stack and profile, no host needed)
Bluetooth qualified embedded BLE stack and GATT profile for easy Bluetooth product qualification
Ultra-low bill of materials due to very few external components:
- No external memory is needed, on-chip Flash and RAM stores small to medium size application code and data
- System integration is simplified by various on-chip peripherals
- On-chip silicon oscillator for sleep mode removes the need for an external crystal or clock source
- Only a small RF circuit is necessary due to built-in discrete components
Supports over-the-air (OTA) update of system software
The device can operate at voltages between 1.8V and 3.6V making it suitable for use with various battery types such as coin cell, AAA, or AA
Various sleep modes and clock options to optimize power consumption
Supports a multiple number of simultaneous master/slave connections
QFN40 or QFN60 packages allow small and cheap form factor designs

TC35678 Features

Bluetooth Low Energy (BLE) 4.2 compliant
Supports BLE GAP central and peripheral mode
Embedded 256KB Flash Memory and internal RAM for application code, data patches
On-chip balun, antenna switch, LNA, DC-DC converter
Operational Voltage: 1.8V to 3.6V
BLE TX peak power consumption: 3.3mA (@0dBm)
BLE RX peak power consumption: 3.3mA
On-chip silicon oscillator for sleep mode
Deep sleep mode: Less than 100nA (@3.0V)
Transmitter Output Power: 0dBm to -20dBm (4dB steps)
RX Sensitivity: -93dBm (typ.)
Operating Temperature Range: -40°C to 85°C
Package: 40pin QFN 5mm x 5mm 0.4 mm pitch, or 60pin QFN 7mm x 7mm 0.4 mm pitch
Profiles: GATT (Generic Attribute Profile), including server and client functions
Interfaces: UART (2), SPI & I2C interface, PWM output (4 channels), ADC (6/8 channels), 17/32 programmable IO
Single Wire Debug (SWD) interface