High-voltage MOSFET, super-junction MOSFET, standard switching speed, high switching speed, high-speed diode
The design team launched a project for a new power supply unit with improved efficiency, but ran into a wall...
How did the team solve the problem?
DTMOSIV mid- to high-voltage super-junction MOSFET series fabricated using a single-epitaxial process
Drawing on many years of experience, Toshiba Electronic Devices & Storage Corporation offers an extensive lineup of 500- to 800-V super-junction MOSFETs with standard and high-speed switching, and high-speed diode options.
Company A received an inquiry from an information equipment manufacturer for a high-efficiency power supply unit that can be used with multiple server models. In order to open up new business opportunities, Company A chose to create a new design for the power supply unit.
Although its design team tried to create a power supply unit with higher efficiency, it was having difficulty in raising the switching performance to a level close to the initial specification targets. The design team sought advice from the manufacturers of major semiconductor components to be used in the power supply unit, but it could not break the deadlock. The scheduled completion date was drawing close, but the design team had yet to find a solution. So, what was the solution? What did they do to create a power supply unit with higher efficiency?
At his wit’s end, an engineer of Company A went to a New Products Show held by Toshiba Electronic Devices & Storage Corporation to obtain advice from its engineers. Toshiba immediately sent a field application engineer (FAE) to Company A to learn about the current situation and analyze the circuit in question. As a result, it was found out that Company A had chosen MOSFETs with low on-resistance in order to reduce power losses while trying to obtain an 80 PLUS efficiency level certification for large power supply units. However, the increased gate charge of low-on-resistance MOSFETs caused the switching speed to decrease and therefore switching losses to increase. Since reducing on-resistance loss causes the switching losses to increase, it is necessary to select the optimal devices. However, the design team of Company A had trouble finding MOSFETs that would best meet its needs.
Toshiba’s DTMOS IV is a super-junction MOSFET series fabricated using a single-epitaxial process to achieve significant reductions in on-resistance and gate charge (Qg). Featuring an extensive product lineup, the DTMOS IV series allowed the design team to select MOSFETs that would best suit its specific needs. The lineup of both standard and high-speed MOSFETs was also appealing to the design team.
The new power supply unit incorporating MOSFETs of Toshiba’s mid- to high-voltage DTMOSIV series was highly regarded and adopted by the information equipment manufacturer.
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