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Alimentations DC-DC à stockage inductif

Les alimentations DC-DC à stockage inductif sont conçues pour les applications d'une puissance allant jusqu'à 100 W. Malgré la simplicité de la configuration du circuit, une alimentation DC-DC à stockage inductif peut augmenter ou abaisser la tension de son entrée à sa sortie. Le convertisseur continu-continu à découpage (RCC) autoexcité est une variante à stockage inductif qui utilise le bobinage primaire auxiliaire d'un transformateur pour piloter un MOSFET sans passer par un CI contrôleur.

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Alimentations DC-DC à stockage inductif

MOSFET for Main Switch Photocoupler Synchronous rectification MOSFETs MOSFET gate drivers



Name Outline Date of issue
Describes the features of the DTMOSV series and the improvements from the previous series 9/2017

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  • DTMOS Applications (Noise Reduction)
Describes the mechanism of noise generation and noise reduction techniques coming soon

Application Note

Application note
Name outline Date of issue
Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. 01/2018
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
describes how to calculate the temperature of discrete semiconductor devices. 12/2017
discusses temperature derating of the MOSFET safe operating area. 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

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Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016



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Questions concernant les achats, l'échantillonnage et la fiabilité des circuits intégrés
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