Not Recommended for New Design
Small Low ON resistance MOSFETs
Application Scope | Power Management Switches |
---|---|
Feature | 1.5-volt gate drive voltage |
Polarity | P-ch |
Generation | U-MOSⅣ |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
For new designs, the following product(s) should be used instead of this product.
Part Number | Compatible level | Notes |
---|---|---|
SSM3J133TU | Almost same package but similar characteristics | - |
SSM3J130TU | Package and characteristics are almost same | - |
SSM6J212FE | Almost same characteristics but different package | - |
Toshiba Package Name | UFM |
---|---|
Package Image | |
Package Code | SOT-323F |
Pins | 3 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.0×2.1×0.7 |
Package Dimensions | View |
Land pattern dimensions | View |
CAD data (Symbol, Footprint and 3D model) |
Download from UltraLibrarian® in your desired CAD format (Note) |
Please refer to the link destination to check the detailed size.
(Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | -20 | V |
Gate-Source voltage | VGSS | +/-8 | V |
Drain current | ID | -4.0 | A |
Power Dissipation | PD | 0.5 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | -1.0 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4V | 38 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.5V | 49 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 78 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.5V | 140 | mΩ |
Input capacitance (Typ.) | Ciss | - | 1484 | pF |
Total gate charge (Typ.) | Qg | VGS=-4V | 22.3 | nC |
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