Not Recommended for New Design
Power MOSFET (N-ch + P-ch complementary)
Application Scope | Mobile Equipments / Motor Drivers |
---|---|
Polarity | N-ch + P-ch |
Generation | U-MOSⅥ-H / U-MOSⅥ |
Internal Connection | Independent |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | PS-8 |
---|---|
Package Image | |
Pins | 8 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.9×2.8×0.8 |
Package Dimensions | View |
Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage (Q1) | VDSS | 30 | V |
Gate-Source voltage (Q1) | VGSS | +/-20 | V |
Drain current (Q1) | ID | 6.5 | A |
Drain-Source voltage (Q2) | VDSS | -30 | V |
Gate-Source voltage (Q2) | VGSS | +/-20 | V |
Drain current (Q2) | ID | -6.0 | A |
Power Dissipation | PD | 1.48 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Q1) (Max) | Vth | - | 2.3 | V |
Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=4.5V | 29 | mΩ |
Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=10V | 26 | mΩ |
Input capacitance (Q1) (Typ.) | Ciss | - | 830 | pF |
Total gate charge (Q1) (Typ.) | Qg | VGS=10V | 13.8 | nC |
Gate threshold voltage (Q2) (Max) | Vth | - | -2.0 | V |
Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-10V | 31.3 | mΩ |
Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-4.5V | 42 | mΩ |
Input capacitance (Q2) (Typ.) | Ciss | - | 1075 | pF |
Total gate charge (Q2) (Typ.) | Qg | VGS=-10V | 24.1 | nC |
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