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PPI Switching Devices for HVDC Systems

PPI Switching Devices for HVDC Systems

Toshiba Electronic Devices & Storage Corporation has developed and released a line of injection enhanced gate transistors (IEGTs) known as press-pack IEGTs (PPIs) as switching devices for HVDC systems. These PPIs incorporate the following features: (1) an 18% reduction in energy loss through the introduction of a new trench structure, (2) an improved short-circuit failure mode (SCFM) allowing 50 hours of continuous current driving

in the event of device failure, and (3) high rupture resistance through the application of a new package that achieves 1.7 times the rupture resistance of conventional packages.

  *Toshiba Review (Vol.72, No.5, November 2017)

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