TK50P03M1

EOL announced

Power MOSFET (N-ch single VDSS≤30V)

Description

Application Scope Switching Voltage Regulators / Power Management Switches / Motor Drivers
Polarity N-ch
Generation U-MOSⅥ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name DPAK
Package Image DPAK
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
6.6×10.0×2.3
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Land pattern dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 50 A
Power Dissipation PD 47 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 9.8
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 7.5
Input capacitance (Typ.) Ciss - 1700 pF
Total gate charge (Typ.) Qg VGS=10V 25.3 nC

Document

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