TK65G10N1

EOL announced

Power MOSFET (N-ch single 60V<VDSS≤150V)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name D2PAK
Package Image D2PAK
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
10.35×15.3×4.46
Package Dimensions 보기
Land pattern dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

 Please refer to the link destination to check the detailed size.

 (Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 100 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 136 A
Power Dissipation PD 156 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 4.5
Input capacitance (Typ.) Ciss - 5400 pF
Total gate charge (Typ.) Qg VGS=10V 81 nC

Document

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Jun,2016

Feb,2019

Apr,2016

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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