TPHR9003NC

Power MOSFET (N-ch single VDSS≤30V)

  • Related Reference Design(1)

Description

Application Scope ORing Circuits / Power Management Switches
Polarity N-ch
Generation U-MOSⅧ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOP Advance
Package Image SOP Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
5.0×6.0×0.95
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Land pattern dimensions 보기
CAD data
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 220 A
Power Dissipation PD 78 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 1.4
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 0.9
Input capacitance (Typ.) Ciss - 5300 pF
Total gate charge (Typ.) Qg VGS=10V 75 nC
Purchase and Sample
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Document

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Feb,2024

Dec,2023

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