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Electrical characteristics of MOSFETs (Body diode IDR/IDRP/VDSF/trr/Qrr/dv/dt)

A power MOSFET has a circuit structure between source and drain equivalent to a diode. Regarding products for applications in which this body diode is used, the following characteristics are listed on the data sheet.

  • Reverse drain current (DC) / Reverse drain current (pulsed) IDR/IDRP
    The maximum current that can flow to the body diode of a MOSFET in the forward direction
  • Diode forward voltage VDSF
    Drain-source voltage that appears when a current is applied to the body diode of a MOSFET in the forward direction
  • Reverse recovery time trr
  • Diode reverse recovery charge Qrr
  • Diode peak reverse recovery current Irr
    The time trr and the amount of charge Qrr required for the reverse recovery current to reach zero during the reverse recovery operation of the body diode under the specified test conditions.
    The peak current during this period is Irr.
  • Diode dv/dt capability dv/dt
    The maximum voltage ramp allowed during the reverse recovery time of the diode




Data sheet description

Characteristics Symbol Test Conditions Min Typ Max Unit
Diode forward voltage VDSF IDR = 30.8 A, VGS = 0 V - - -1.7 V
Reverse recovery time trr IDR = 15.4 A, VGS = 0 V
-dIDR/dt = 100 A/μs
- 135 220 ns
Diode reverse recovery charge Qrr - 0.6 - μC
Diode peak reverse recovery current Irr - 10 - A
Diode dv/dt capability dv/dt dv/dt IDR = 15.4 A, VGS = 0 V, VDD = 400 V 50 - - V/ns

Electrical Characteristics: Power MOSFET Application Notes (PDF:1,092KB)
https://toshiba.semicon-storage.com/info/docget.jsp?did=13415

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