Contact us

Uma nova janela será aberta Uma nova janela será aberta

Why do Toshiba's power MOSFETs exhibit larger gate-source leakage current, IGSS, than those of other companies?

Toshiba's Power MOSFETs generally have a Zener diode between gate and source for electrostatic protection, which contributes additional leakage current to IGSS. Therefore, Power MOSFETs with a Zener diode exhibit a slightly larger IDSS than those without one (which cause leakage current only from a dielectric film).

To Top
·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.