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Reading individual technical datasheets for bipolar transistors

Maximum Ratings (Ta = 25°C)

Characteristic Symbol Ratings Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 30 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 125
Storage temperature Tstg -55~125

Definitions of the Terms in the Table

VCBO:

Absolute maximum voltage that can be applied across the collector and base terminals with the emitter terminal open

VCEO:

Absolute maximum voltage that can be applied across the collector and emitter terminals with the base terminal open

VEBO:

Absolute maximum voltage that can be applied across the emitter and base terminals with the collector terminal open

Collector current, IC:

Maximum DC (continuous) collector current

Base current, IB:

Maximum DC (continuous) base current

Collector power dissipation, PC:

Maximum allowable collector power dissipation

Junction temperature Tj:

Maximum junction temperature that the transistor can tolerate

Storage temperature Tstg:

Storage temperature range in which the device can be stored with no voltage applied

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