SiC Schottky Barrier Diodes

The new second generation 650V SiC SBDs, improved with both surge forward current (I_FSM) and switching loss (R_on*Q_c) ^{[Note 1]}, realizes higher power supply efficiency.

• High surge forward current (I_FSM): 8 times higher than current rating IF_(DC)
• Low switching loss index (R_on*Q_c) ^{[Note 1]}: Higher efficiency
• Isolated package line-up: Easier circuit and thermal design to reduce assembly processes

Power factor correction (PFC) for high efficiency power supply, Chopper circuit, and free wheel diode for switching element

• Commercial use/OA equipment: 4K Liquid Crystal Display, projector, multifunction printer
• Industrial use: telecommunications base stations, PC servers

New second generation 650V SBDs Line-up / Characteristics

[Notes 1] R_ON: Anode-cathode on-resistance, Qc: Total capacitive charge

Related Information

General Catalog

Due to a major shift in customer focus to environmentally friendly, clean energy sources, market demand is increasing for power devices that will make it possible to achieve low-loss and high-efficiency power conversion. Silicon carbide (SiC), a wide-gap semiconductor, is expected to be a material for the next-generation high-voltage, low-loss power devices because its critical breakdown field is more than eight times that of silicon (Si).
While Si SBDs are available with a V_RRM of only up to 200 V, Toshiba's new SiC-based Schottky barrier diodes (SBDs) provide higher reverse voltage (V_RRM) because of low leakage current in the high-temperature region. SiC Schottky Barrier Diodes are ideal for power conversion applications such as server power supplies and solar power conditioners. At high voltage and high current, the operation of SiC Schottky Barrier Diodes is more stable than that of the conventional Si SBDs. Therefore, SiC Schottky Barrier Diodes help to significantly reduce the loss of power through heat.

SiC Schottky Barrier Diodes are majority carrier devices and have the same structure as Si SBDs. Fabricated with a wide-gap semiconductor, SiC Schottky Barrier Diodes exhibit low leakage current even in the high-temperature region, making it possible to maintain stable operation at high voltage and high current. Toshiba's SiC Schottky Barrier Diodes have a Junction Barrier Schottky (JBS) structure to further reduce leakage current.

Theoretically, SiC Schottky Barrier Diodes provide zero reverse recovery time, trr, because of the Schottky structure and majority carrier operation. In practice, however, SiC Schottky Barrier Diodes also have a reverse recovery region. Its reverse recovery time, trr, is as short as 20 ns (at Ta = 25°C), compared with Si high-efficiency diodes (HEDs) with a trr of 40 ns.

Because SiC Schottky Barrier Diodes are majority carrier devices, their electrical performance is theoretically independent of temperature. Thus, SiC Schottky Barrier Diodes exhibit excellent performance even in the high-temperature region.

SiC Schottky Barrier Diodes offer low total loss, which consists of conduction loss and switching loss. Therefore, SiC Schottky Barrier Diodes can switch at high frequencies, making it possible to reduce the size of power supplies.

* HED: High-Efficiency Diodes

There is a trade-off between the forward voltage (V_F) and reverse current (I_R) of an SiC Schottky Barrier Diode. Toshiba is endeavoring to improve the V_F-I_R trade-off by optimizing the device structure. Our SiC Schottky Barrier Diodes exhibit low loss even in the high-temperature region and thus help reduce power loss.

Toshiba's SiC Schottky Barrier Diodes have low dependence on forward voltage, V_F, making it possible to reduce conduction loss in the high-temperature region.