SiC Schottky Barrier Diodes

SiC Schottky barrier diodes (SBDs) feature high reverse voltage ratings. In addition to SBDs with short reverse recovery time (t_rr), Toshiba provides 650-V SBDs with a junction barrier Schottky (JBS) structure that provide low leakage current (I_r) and high surge current capability required for switched-mode power supplies. These devices help improve the efficiency of switched-mode power supplies.

Lineups

Voltage

650V

Packaging

Through Hole Type

Highlight

The following table shows the characteristics of fast recovery diodes (FRDs) and SBDs fabricated with silicon (Si) and of SBDs fabricated with SiC. SiC diodes provide electrical characteristics required for power supply circuits that are difficult to achieve with silicon diodes.

Electrical characteristics and symbols (Improvement direction)	Effect on circuits	Si material		SiC material
	Effect on circuits	FRD*	SBD	SBD	SBD (Improved JBS structure)
Reverse voltage, V_R (high)	Voltage surge during switching	★★★★	★	★★★★★	★★★★★
Leakage current, I_R (low)	Thermal runaway	★★	★	★★★	★★★★★
Forward Voltage, V_F (low)	Considerable effect on efficiency	★★★	★★★★★	★★★	★★★
Reverse recovery time, t_rr (low)	Considerable effect on efficiency	★	★★★★★	★★★★★	★★★★★
Surge current, I_FSM (large)	Inrush current when switching on	★★★★★	★★	★	★★★

The greater the number of ★, the better.

* FRD: Fast recovery diode

Improved JBS structure to reduce the leakage current and increase the surge current capability

The improved JBS structure has been applied to ameliorate problems such as large SBD leakage current and low surge current tolerance.

SiC SBD with lower switching loss

By using SiC, we have realized devices with high withstand voltage and low switching loss (low reverse recovery charge).

High withstand voltage characteristics of SiC SBDs

Realized high breakdown voltage device by electric breakdown field nearly 10 times compared to Si.

Application

Because of the outstanding physical properties of SiC, Toshiba’s SiC Schottky barrier diodes (SBDs) with an improved JBS structure provide higher withstand voltage, lower leakage current, higher surge current capability, and lower reverse recovery charge than achievable with conventional SBDs. These diodes help reduce power losses and increase circuit frequency considerably when they are used in the power factor correction (PFC) circuits of high-efficiency power supplies for servers, communication base stations, and PCs and as freewheeling diodes in inverter circuits for photovoltaic power generators and motor drivers.