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To meet the increasingly stringent requirements for pure, high quality sputtering targets, Toshiba makes full use of the latest purity-refining and microstructural control technologies. Adding these to our well established metallurgical expertise in producing tungsten, molybdenum, and other specialty alloys allows us to engineer sputtering targets specifically designed for a host of applications.
We have developed sputtering targets with reduced impurities levels through our proprietary refining and melting technologies. Our patented metallurgical processing techniques produce a small and homogeneous grain structure in the targets.
Please feel free to contact us to discuss your application and to receive detailed information on the product of interest. For further information please contact the Advanced Materials Division of Toshiba America Electronic Components, Inc. For other product details, please visit our affiliate Toshiba Materials Co., Ltd.
|Part Number||Purity||Fe (ppm)||Ni (ppm)||Cr (ppm)||Cu (ppm)||Mn (ppm)||Al (ppm)||Na (ppm)||K (ppm)||C (ppm)||N (ppm)||O (ppm)|
|Ta (Tantalum)||4N5 Up||‹ 0.1||‹ 0.1||‹ 0.1||‹ 0.1||0||0||‹ 0.1||‹ 0.1||0||0||12|
|Ti (Titanium)||5N Up||‹ 9||‹ 5||‹ 5||‹ 3||0||‹ 5||‹ 0.03||‹ 0.05||‹ 20||‹ 50||‹ 200|
|Ti (Titanium)||4N5 Up||‹ 20||‹ 20||‹ 20||‹ 20||0||‹ 20||‹ 0.1||‹ 0.1||‹ 50||‹ 60||‹ 200|
|Nb (Niobium)||3N Up||3.0||12.0||‹ 5||‹ 5||‹ 1||0||‹ 5||‹ 5||‹ 5||28||64|
|W (Tungsten)||5N Up||‹ 1||‹ 0.1||‹ 0.5||‹ 0.2||0||‹ 0.2||‹ 0.1||‹ 0.1||‹ 10||‹ 10||10|