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UFS

Related Information

Memory Microsite | Memory Blog

Toshiba’s NAND flash memories (NAND) with an integrated controller provide error correction, wear leveling, bad-block management, and more. Their interface is compliant with JEDEC/UFS Version.2.0, eliminating the need for users to perform NAND-specific control.

This simplifies integration of Flash memory storage into embedded applications.


UFS FAQ with Electronic Design (342 KB)

UFS製品一覧表
Capacity Part Number UFS
Version
Max Data Rate
(MB/s)
Supply Voltage Operating Temperature
(°C)
Package
VCC
(V)
VCCQ
(V)
VCCQ2
(V)
Size (mm) Code
32 GBytes THGAF4G8N2LBAIR 2.1 1166 2.7 to 3.6 - (1) 1.70 to 1.95 -25 to 85 11.5x13x1.0 P-VFBGA153-1113-0.50
64 GBytes THGAF4G9N4LBAIR 2.1 1166 2.7 to 3.6 - (1) 1.70 to 1.95 -25 to 85 11.5x13x1.0 P-VFBGA153-1113-0.50
128 GBytes THGAF4T0N8LBAIR 2.1 1166 2.7 to 3.6 - (1) 1.70 to 1.95 -25 to 85 11.5x13x1.0 P-VFBGA153-1113-0.50
  • Note (1): This product supports dual-supply operation at Vcc and VccQ2. VccQ need not be supplied.
  • Contact the Toshiba sales representative for sample schedule about products under development.

Links

MLC/NAND Flash Memory

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.