Radio-Frequency Devices

Clicking on product's category allows you to see Radio-Frequency Devices Part Naming Conventions.

Radio-Frequency Diode (EIAJ registration products)

Example of Radio-Frequency Diode (EIAJ registration products)
Example of Radio-Frequency Diode (EIAJ registration products)

1. The value that subtracted 1 from the total number of terminals

2. S stands for Semiconductor

3. The kind of diode
This section shows the kind of the diode being used.
( It is omitted in certain cases. )

  • S: diode of general-purpose use, detection use, fequency conversion use, and switching use
  • V: variable capacitance diode, PIN diode
  • Z: zener diode

4. Serial number
EIAJ registration numbers

Radio-Frequency Diode (EIAJ un-registration products)

Example of Radio-Frequency Diode (EIAJ un-registration products)
Example of Radio-Frequency Diode (EIAJ un-registration products)

1. JD means High-frequency diode

2. The kind of devices
This section shows the kind of the devices being used.
It is classified into H, P, S, and V by the devices being loaded.

  • H: schottky barrier diode
  • P: PIN diode
  • S: band switching diode
  • V: variable capacitance diode

3. The number of terminals

4. Internal connection
This section shows the kind of the internal connection of a product.

  • S: single
  • C: cathode common
  • P: parallel

5. Serial number

6. Package type

(No mark) S-MINI
U USC, USQ
T TESC, TESQ
E ESC
S sESC
FS fSC
CT CST3, CST4
SC SC2
FV VESM

Radio-Frequency Transistor (EIAJ registration products)

Example of Radio-Frequency Transistor (EIAJ registration products)
Example of Radio-Frequency Transistor (EIAJ registration products)

1. The value that subtracted 1 from the total number of terminals

2. S stands for Semiconductor

3. The kind of circuit
This section shows the kind of the circuit of a product.
It is classified into form A to K by the circuit of a product.

  • A: a transistor of high-frequency and PNP structure
  • B: a transistor of low-frequency and PNP structure
  • C: a transistor of high-frequency and NPN structure
  • D: a transistor of low-frequency and NPN structure
  • J: a transistor of effective transistor ( FET )
  • K: an Nch field effective transistor ( FET )

4. Serial number
EIAJ registration numbers.

5. Changes
The additional symbol which shows some changes.

Radio-Frequency Transistor (Microwave transistor)

Example of Radio-Frequency Transistor (Microwave transistor)
Example of Radio-Frequency Transistor (Microwave transistor)

1. MT stands for Toshiba Microwave transistor

2. The number of terminals

3. Internal connection
This section shows the kind of the internal connection of a procuct.

  • S: Single
  • C: Cascade arrangement
  • P: Parallel arrangement
  • L: Lateral arrangement

4. Serial number

5. Changes
The additional symbol which shows some changes

6. Package type
This section shows the package type.

(No mark) S-MINI, SMQ
U USM, USQ, US6
S SSM, sES6
T TESM, TU6, TESQ
E ES6
FS fSM, fS6
CT CST3

Radio-Frequency Power Transistor (EIAJ registration products)

Example of Radio-Frequency Power Transistor (EIAJ registration products)
Example of Radio-Frequency Power Transistor (EIAJ registration products)

1. The value that subtracted 1 form the total number of terminals

2. S stands for Semiconductor

3. The kind of circuit
This section shows the kind of the circuit of a product.
It is classified into from A to K by the circuit being used.

  • A: a transistor of high-frequency and PNP structure
  • B: a transistor of low-frequency and PNP structure
  • C: a transistor of high-frequency and NPN structure
  • D: a transistor of low-frequency and NPN structure
  • J: a P-ch field effective transistor (FET)
  • K: an N-ch field effective transistor (FET)

4. Serial number
EIAJ registration numbers

5. Changes
The additional symbol which shows some changes.

Radio-Frequency Power Transistor (RF-MOSFET)

Example of Radio-Frequency Power Transistor (RF-MOSFET)
Example of Radio-Frequency Power Transistor (RF-MOSFET)

1. RFM stands for Toshiba RF-MOSFET.

2. This section shows the output power(W) of a procuct.

  • 00: 0.03W
  • 07: 7.0W
  • 12: 11.5W

3. This section shows the operating frequency(MHz) of a procuct.

  • U: 400 to 520MHz
  • M: 700 to 950MHz

4. This section shows the operating voltage(V) of a procuct.

  • 4: 4.5V
  • 7: 7.2V

5. Other information

6. Package type
It shows the package type.

  • U: USQ
  • M: PW-MINI
  • X: PW-X

Radio-frequency Power module

Example of Radio-frequency Power module
Example of Radio-frequency Power module

1. S-A means Toshiba RF power module

2. Frequency band

  • U: UHF
  • V: VHF

3. Serial number

4. Changes
The additional symbol which shows some changes.

5. Frequency band subdivision
Magnitude relation is as follows.
VL < L < M < H < VH < SH

Cell packs for Radio-frequency use

Example of Cell packs for Radio-frequency use
Example of Cell packs for Radio-frequency use

1. Materials, Applications
This section shows the materials and applications.
The details are shown in the following table.

1 Materials Applications
TA40 Si Crystal oscillators
UHF Wide band Amp.
VHF-UHF Wide band Amp.
VHF (Wide) RF Amp.
Cable modems
TA41 VHF-UHF Amp. MIX
VHF-UHF DBM
1.9GHz U/C MIX
1 GHz band D/C IC
TA43 BS/CS D/C IC
TG20 GaAs Power Amp. for PHS ( Personal Handy phone System )
TG22 PHS SPDT Sw.
General purpose SPDT Sw.
ATT

2. Serial number

3. Package type

  • FU: USV
  • F / AF: SMQ / SMV / SM6 / SM8 / SSOP20
  • FE: ESV / ES6
  • FT: TU6
  • FC: CS6
  • S: sES6
  • TU: UF6
  • CTB: CST6B
  • CT: CST20

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