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Buck Power Supplies

降壓電源(Buck Power Supplies)是最常見的非絕緣DC-DC轉換器,用作移動設備和CPU的電源,功率範圍從幾瓦到超過100瓦。由於降壓電源的工作頻率高於其他類型的電源,因此使用具有高速開關性能的MOSFET。對更高效率的需求推動了同步整流的轉變。東芝正在擴大其最新的UMOS-Ⅷ-H和UMOS-Ⅸ-H系列產品組合,具有高速開關性能和低導通電阻,是降壓電源應用的理想選擇。

方塊圖

點擊以下紅色方塊可參考建議產品

Buck型電源の回路例

High-Side MOSFET Low-Side MOSFET

文件

白皮書

Whitepaper
Name Outline Date of issue
Describes the features of the DTMOSV series and the improvements from the previous series 9/2017

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  • DTMOS Applications (Noise Reduction)
Describes the mechanism of noise generation and noise reduction techniques coming soon

應用手冊

Application note
Name outline Date of issue
Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. 01/2018
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
describes how to calculate the temperature of discrete semiconductor devices. 12/2017
discusses temperature derating of the MOSFET safe operating area. 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

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Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.