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AC-DC反激式轉換器由少量元件組成，用於瓦數小於100W的電源應用，如筆記本電腦和其他移動設備的適配器。東芝提供具有800 V VDSS的低損耗MOSFET，理想用於反激式應用。
點擊紅色方塊可參考建議產品
| Name | Outline | Date of issue | |
|---|---|---|---|
| Describes the features of the DTMOSV series and the improvements from the previous series | 9/2017 | ||
|
Describes the mechanism of noise generation and noise reduction techniques | coming soon |
| Name | outline | Date of issue | |
|---|---|---|---|
| Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. | 01/2018 | ||
|
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. | 12/2017 | |
|
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it | 12/2017 | |
| describes how to reduce the chip temperature of discrete semiconductor devices. | 12/2017 | ||
| describes how to calculate the temperature of discrete semiconductor devices. | 12/2017 | ||
|
discusses temperature derating of the MOSFET safe operating area. | 12/2017 | |
|
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. | 12/2017 | |
| Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits | 11/2017 | ||
| Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation | 11/2017 | ||
| Describes the oscillation mechanism of MOSFETs for switching applications | 11/2017 | ||
| Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment | 2/2017 | ||
| Describes planar, trench and super-junction power MOSFETs | 11/2016 | ||
|
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs | 11/2016 | |
| Describes electrical characteristics shown in datasheets | 11/2016 | ||
| Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on | 11/2016 |
When the switch is closed, the primary inductance of a transformer stores energy. When the switch is opened, the stored energy is transferred from the transformer to the output load. Therefore, the output voltage is not a function of the transformer turns ratio.
The output voltage is determined by the on/off ratio of the transistor, the primary inductance of the transformer, and the load resistance (R):
Vo={√(R/2Lp)[Ton/√(Ton+Toff)]}Vin
where, Lp is the primary inductance, Ton and Toff are the "on" and "off" periods of the transistor, and R is the load resistance.
A flyback converter consists of a small number of parts. However, since the core size must be increased to obtain high power output, flyback converters are utilized only for low-wattage power supply applications.
Compared with a forward converter, a flyback converter can dispense with an output inductor and a flywheel diode, making it suitable for low-cost power supplies.
Since the flyback converter does not have an output inductor, it provides excellent load transient response.
For high-frequency switching, a small, lightweight transformer can be used.
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When Q1 is turned on, energy is stored in the primary winding. When Q1 is turned off, it is transferred to the secondary winding and supplies the output load.
A voltage (Vdc) is applied across LP.
The primary current in the transformer increases as shown according to its current gain.
dip/dt=(VS-VDS1)/Lp
where, VDS1 is the Q1 voltage, and Lp is the primary inductance.
Hence, the peak current at the end of the "on" state is calculated as follows:
Ip=(VS-VDS1)Ton/Lp
The electromagnetic energy stored in the primary winding is calculated as:
E=Lp × Ip2 /2
The voltage polarity of the secondary winding reverses
As a result, the energy stored in the secondary winding is released. At this time, the secondary current linearly decreases as shown in the following equation:
dIs/dt=VOUT/Ls where, Ls is the secondary inductance.
If Is becomes zero before Q1 is turned on again, all the energy stored in the primary (E) is delivered to the output load. The power supplied to the output load is calculated as follows:
P=E/T＝［(VS-VDS1)Ton］2/(2T×Lp) ≈ (VS×Ton)2/(2T×Lp)
Then, since the power delivered to the load is Vo2/RL, VOUT is calculated as follows:
(VS×Ton)2 / (2T/Lp) = VOUT2/RL
VOUT = (VS×Ton)√［RL/(2T×Lp)］
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