AC-DC反激式轉換器由少量元件組成,用於瓦數小於100W的電源應用,如筆記本電腦和其他移動設備的適配器。東芝提供具有800 V VDSS的低損耗MOSFET,理想用於反激式應用。
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Name | Outline | Date of issue | |
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Describes the features of the DTMOSV series and the improvements from the previous series | 9/2017 | ||
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Describes the mechanism of noise generation and noise reduction techniques | coming soon |
Name | outline | Date of issue | |
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Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. | 01/2018 | ||
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The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. | 12/2017 | |
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Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it | 12/2017 | |
describes how to reduce the chip temperature of discrete semiconductor devices. | 12/2017 | ||
describes how to calculate the temperature of discrete semiconductor devices. | 12/2017 | ||
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discusses temperature derating of the MOSFET safe operating area. | 12/2017 | |
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When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. | 12/2017 | |
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits | 11/2017 | ||
Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation | 11/2017 | ||
Describes the oscillation mechanism of MOSFETs for switching applications | 11/2017 | ||
Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment | 2/2017 | ||
Describes planar, trench and super-junction power MOSFETs | 11/2016 | ||
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Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs | 11/2016 | |
Describes electrical characteristics shown in datasheets | 11/2016 | ||
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on | 11/2016 |
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