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DC-DC Full-Bridge Power Supplies

由於full-bridge AC-DC (全橋交流 - 直流電源)提供的效率高於半橋電路,因此主要用於大容量應用(功率超過1kW)。全橋電源需要具有高速開關性能,低導通電阻和低噪聲的MOSFET。東芝正在擴大其最新的U-MOS-Ⅷ和U-MOS-Ⅸ系列產品組合,以滿足這些要求。

方塊圖

點擊以下紅色方塊可參考建議產品

フルブリッジ型DC-DC電源の回路例

MOSFET for Main Switch Photocoupler Gate Driver MOSFETs for Rectification ORing MOSFET

文件

白皮書

Whitepaper
Name Outline Date of issue
Describes the features of the DTMOSV series and the improvements from the previous series 9/2017

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  • DTMOS Applications (Noise Reduction)
Describes the mechanism of noise generation and noise reduction techniques coming soon

應用手冊

Application note
Name outline Date of issue
Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. 01/2018
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
describes how to calculate the temperature of discrete semiconductor devices. 12/2017
discusses temperature derating of the MOSFET safe operating area. 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

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Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.