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全橋式AC-DC電源

由於全橋電源提供比半橋電路更高的效率,因此主要用於大容量應用(功率超過1kW)。全橋電源需要具有高速開關性能的MOSFET或具有短反向恢復時間(trr)的二極管。東芝提供結合了這兩種特性的600至650V MOSFET

方塊圖

點擊紅色方塊可參考建議產品

フルブリッジ型AC-DC電源の回路例

Blocking Diode PFC MOSFET PFC Controller ICs Main Switch MOSFET Photocoupler Gate Driver Rectification MOSFET Oring MOSFET

文件

白皮書

Whitepaper
Name Outline Date of issue
Describes the features of the DTMOSV series and the improvements from the previous series 9/2017

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  • DTMOS Applications (Noise Reduction)
Describes the mechanism of noise generation and noise reduction techniques coming soon

應用手冊

Application note
Name outline Date of issue
Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. 01/2018
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
describes how to calculate the temperature of discrete semiconductor devices. 12/2017
discusses temperature derating of the MOSFET safe operating area. 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

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Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016

Video


  • Circuit Overview

    Although full-bridge AC-DC power supplies have a complex circuit configuration, low-voltage devices can be used to build them.

    Since full-bridge AC-DC power supplies exhibit high efficiency, they are used for 300-W and higher-capacity power supply applications.

    The circuit on the primary side of a transformer is comprised of Q1 to Q4, their parasitic diodes, and an inductor (L). The current flows change as shown in the figure according to the "on" and "off" states of the transistors.

    Timing 

    0 to t1:Q1,Q3:ON    Q2,Q4:OFF

    t1 to t2:Q1,Q3:OFF

    t2 to t3:Q1,Q3:OFF    Q2,Q4:ON

    t3 to t4:Q2,Q4:OFF

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  • Operation

    1. Q1/Q3 ON

    Q1 and Q3 are turned on. As a result, Vs is applied across the primary winding of the transformer Np.
    At the same time, the energy stored in the primary winding is transferred to the secondary winding. Since the polarity of this voltage is positive, an electric current flows through D1 and L, charging C.

    2. Q1/Q3 OFF

    When Q1 and Q3 are turned off, the energy stored in the reactor LD is flowing a load current in the secondary side.

    3. Q2/Q4 ON

    Q2 and Q4 are turned on. As a result, Vs is applied across the primary winding of the transformer Np.
    At the same time, the energy stored in the primary winding is transferred to the secondary winding. Since the polarity of this voltage is opposite to that at Step 1, a current flows through D2 and L, charging C.

    4. Q2/Q4 OFF

    When Q2 and Q4 are turned off, the energy stored in the reactor LD is flowing a load current in the secondary side.

    The output voltage is approximated as follows:

    t(on): Cycle period minus dead time,
    T: Cycle period, Np: Primary winding, Ns: Secondary winding (Ns1=Ns2=Ns), Vs>>Vds, Vf

    VOUT=[Vs x (Ns/Np) ]x ( 2xt(ON)/T)



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