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AC-DC諧振式半橋電源

諧振半橋電源適用於相對大容量的電源應用,非常適合功率為150 W至1.6 kW的應用。由於諧振半橋電源由於零電壓開關(ZVS)而以非常高的效率運行,因此它們提供了非常高的效率。 VDSS為500 V至600 V的典型MOSFET可用於諧振半橋供電應用。東芝還為MOSFET提供具有短反向恢復時間(trr)的高速二極管(HSD),適用於流過體二極管的再生電流導致恢復損耗的應用。

方塊圖

點擊紅色方塊可參考建議產品

共振ハーフブリッジ型AC-DC電源の回路例

Blocking Diode PFC MOSFET PFC Controller ICs Main Switch MOSFET Photocoupler Gate Driver Rectification MOSFET Oring MOSFET

文件

白皮書

Whitepaper
Name Outline Date of issue
Describes the features of the DTMOSV series and the improvements from the previous series 9/2017

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  • DTMOS Applications (Noise Reduction)
Describes the mechanism of noise generation and noise reduction techniques coming soon

應用手冊

Application note
Name outline Date of issue
Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. 01/2018
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
describes how to calculate the temperature of discrete semiconductor devices. 12/2017
discusses temperature derating of the MOSFET safe operating area. 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

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Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016

Video


  • Circuit Overview

    Resonant half-bridge power supplies alternately turn on two transistors and exhibit a high transformer utilization factor. Additionally, resonance helps reduce switching loss, making it possible to deliver high power conversion efficiency.

    Resonant half-bridge power supplies can be employed for high-capacity power supply applications and are commonly used for power supplies with a capacity of 150 W to 1 kW.

    To prevent shoot-through current, resonant half-bridge power supplies require a dead time during which both Q1 and Q2 do not turn on simultaneously. Biased magnetization is unlikely to occur due to the circuit configuration.  

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  • Operation

    1.  Q1 turns on. As a result, a voltage is applied to the resonance circuit comprising Lr, L and Cr, charging Cr.
    The charging current is transmitted to the secondary coil through L. This resonance current increases gradually up to the peak level. Since the voltage applied to L decreases as Cr is charged, the resonance current then begins to decrease.
    However, the excitation current passing through Lm continues flowing.

    2.  Q1 turns off. Excitation current charges the parasitic of Q1 (Cds1) and discharges the parasitic capacitance of Q2 (Cds2).
    Then, a current flows via Dq2. Therefore, Vds1 does not increase immediately, and Vds2 does not decrease immediately.

    3.  When Vds2 reaches zero, Q2 turns on, causing the charge stored in Cr at Step 1 to be discharged.
    This current is transmitted to the secondary coil via L.
    Since the voltage across Cr decreases, the voltage across L decreases, causing the current to decrease gradually.
    However, the excitation current passing through Lm continues flowing.

    4.  Q2 turns off. As is the case with Step 2, Cq1 is discharged, and Cq2 is charged.

    1.  When Vds1 reaches zero, Q1 turns on.


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