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車載IPD

東芝的汽車IPD可以由微控制器直接控制。在負載短路的情況下,過電流保護或熱關斷將被觸發以保護使用IPD的ECU。東芝的汽車IPD還具有診斷輸出,可以將輸出狀態和ECU反饋到微控制器,以便輕鬆監控。

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高端和低端電源開關

東芝的高端和低端電源開關包含用於短路負載,開路負載和輸出電源短路以及異常ECU狀態(過熱)的保護電路。這些電源開關還具有為微控制器提供反饋的診斷輸出。因此,它們有助於減少部件數量並提高ECU的可靠性。東芝的電源開關採用SOP8,PS8和WSON10等小型封裝,有助於縮小ECU尺寸。

高端電源開關的應用示例(TPD1055FA)

This figure shows the application for a High-Side Switch.

高端電源開關的產品陣容

Part Number Package
Outputs(ch)
VDSS
(V)
IO
(A)
Characteristics
Operating
Temperature
Topr
(°C)

Operating
Supply
Voltage(V)
RDS(ON)
(Ω) Max
Power
Dissipation
PD(W)
Protective Functions Diagnostic Functions
Over-
current
(A)
Over-
temperature
(°C)
Over-
voltage
(V)
Over-
current
Open
Load
Over-
temperature
TPD1052F PS-8 1 40 0.8 0.8 0.7
(mounted on
board)
1.2
(clamp)
0.8
(duty)
Min
150
Min
- - -40 to 125 5 to 18
TPD1053F SOP-8 1 60 3 0.12 1.1
(mounted on
board)
3
Min
150
Min
Active
clamp
-16 V Typ.
-40 to 125 5 to 18
TPD1055FA WSON10 1 40 3 0.12 1.84
(mounted on
board)
3
Min
150
Min
- -40 to 125 5 to 18
TPD1060F
SOP-8 1 40 3 0.12 0.9
(mounted on
board)
3
Min
150
Min
- -40 to 125 4 to 18
  • VDSS: Drain-Source Voltage (V)
  • IO: Output Current (A)
  • RDS(ON)max: Maximum On-resistance @Tch=25°C (Ω)

低端電源開關的產品陣容

Part Number Package
Outputs
(ch)
VDSS
(V)
IO
(A)
Characteristics
Operating
TemperatureTopr
(°C)

Operating
Supply
Voltage(V)
RDS(ON)
(Ω) Max
Power
Dissipation
PD(W)
Protective Functions Diagnostic Functions
Over-
current
(A)
Over-
temperature
(°C)
Over-
voltage
(V)
Over-
current
Open
Load
Over-
temperature
TPD1030F SOP-8 2 40 1 0.6 2.0
(t = 10 s)
(mounted
on board)
1
Min
150
Min
Active
clamp
40 V Min
- - - -40 to 110 up to 40
TPD1032F SOP-8 2 20 3 0.4 0.95
(mounted
on board)
3
Min
150
Min
Active
clamp
40 V Min
- - - -40 to 110 up to 20
TPD1036F SOP-8 2 30 1.5 0.5 2.0
(t = 10 s)
(mounted
on board)
1.5
Min
150
Min
Active
clamp
40 V Min
- - - -40 to 110 up to 30
TPD1044F PS-8 1 41 1 0.6 0.9
(mounted
on board)
1
Min
150
Min
Active
clamp
41V Min
- - - -40 to 125 up to 41
TPD1046F SOP-8 2 40 3 0.2 0.95
(mounted
on board)
3
Min
150
Min
Active
clamp
40 V Min
- - - -40 to 125 up to 20
TPD1054F PS-8 1 40 1 0.8 0.7
(mounted
on board)
1
Min
150
Min
Active
clamp
40 V Min
-40 to 125 VOUT =
up to 40
VDD =
4.5 to 5.5
TPD1058FA WSON10 1 40 6 0.1 1.84
(mounted
on board)
6
Min
150
Min
Active
clamp
40 V Min
-40 to 125 VOUT =
up to 40
VDD =
4.5 to 5.5
  • VDSS: Drain-Source Voltage (V)
  • IO: Output Current (A)
  • RDS(ON)max: Maximum On-resistance @Tch=25°C (Ω)

Gate Drivers

透過組合柵極驅動器和功率MOSFET可以構建大電流半導體繼電器開關。

Reference Board

功率MOSFET柵極驅動器應用示例(TPD7104AF)

This figure shows an application example for TPD7104F, Power MOSFET Gate Driver.

Power MOSFET Gate Driver 產品陣容

Part Number Package Configuration
Outputs
(ch)

Supply
Voltage
VDD(V)
Output
Current
IO(A)
Characteristics
Operating
TemperatureTopr
(°C)

Operating
Supply
Voltage(V)
Power
Dissipation
PD(W)
Protective Functions Diagnostic Functions
Over-
current
(A)
Overvoltage/
Undervoltage
(V)
Battery
Reverse
Protection
Over-
current
Overvoltage/
Undervoltage
Over-
voltage
Under-
voltage
Open
Load
Over-
temperature
TPD7101F SSOP-24 High-side
Power-
MOSFET
driver
(with built-in
charge pump)
2 30 Source
current
0.1A Typ.
Sink
current
0.1A Typ.
0.8 Adjustable - VDD: 4.5 V
Max
- - -40 to 110 8 to 18
TPD7102F PS-8 High-side
Power-
MOSFET
driver
(with built-in
charge pump)
1 25 Source
current
1mA Typ.
0.7 - VDD: 18 V
Min
- - High-side N-ch Power-
MOSFET VGS monitor
-40 to 125 7 to 18
TPD7104F PS-8 High-side
Power-
MOSFET
driver
(with built-in
charge pump)
1 24 Source
current
Internal
capacity
Sink
current
0.5mA Max
0.7 Adjustable VOUT: VDD
+ 15.7 V
Typ.
- - - - -40 to 125 5 to 18
TPD7104AF PS-8 High-side
Power-
MOSFET
driver
(with built-in
charge pump)
1 24 Source
current
Internal
capacity
Sink
current
0.5mA Max
0.7 Adjustable VOUT: VDD
+ 15.7 V
Typ.
- - - -40 to 125 5 to 18
TPD7210F SSOP-24 Power-
MOSFET
driver for
3-phase bridge
(with built-in
charge pump)
30 Source
current
1A Max
Sink
current
1A Max
0.8 - - - - Input arm-short
detection-
-40 to 125 4.5 to 18
TPD7211F PS-8 Half-bridge
Power-
MOSFET
driver
(for high-side
P-ch
MOSFET drive)
2 30 Source
current
0.5A Max
Sink
current
0.5A Max
0.7 - - - - - - - -40 to 125 5 to 18
TPD7212F** WQFN32 Power-
MOSFET
driver for
3-phase bridge
(with built-in
charge pump)
6 25 Source
current
-1.0A Max
Sink
current
+1.5A Max
TBD - VDL: 18 V
Typ.
- - -
(VDL)

(VDH, VDL)
-40 to 125 4.5 to 18

**: Under development

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