Contact us

在新視窗打開 在新視窗打開


IGBT is short for Insulated Gate Bipolar Transistor. It is a power transistor with a MOS structure for an input part and a bipolar one for an output part. Suitable for high voltage and high current, it is capable of controlling high power with less drive power. Its applications include induction heating cooking equipment.

Discrete IGBT

Search by Characters

VCES(V) Ta=25°C
400 600 900 to1800
Strobe Flash IGBTs



To Top
·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.