SiC Schottky Barrier Diodes (SiC肖特基勢壘二極體)

SiC肖特基勢壘二極體(SBD)具有較高的反向額定電壓。除了具有短反向恢復時間(t rr )的SBD,東芝還提供具有結勢壘肖特基(JBS)結構的650-V SBD,該結構提供低洩漏電流(I r ) 和開關模式電源所需的高浪湧電流能力。這些設備有助於提高開關電源的效率。

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3rd generation SiC Schottky barrier diode (SBD)
It adopts the new schottky metal, and it is equipped with 3rd generation SiC SBD chip, which optimized junction barrier schottky (JBS) structure of 2nd generation. As a result, we have achieved industry-leading lowest forward voltage 1.2 V (Typ.), which is 17 % lower than that of the 2nd generation 1.45 V (Typ.). The 3rd generation products have improved the trade-offs between forward voltage and total capacitive charge, and the trade-offs between forward voltage and reverse current compared with the 2nd generation products. This reduces power dissipation and contributes to high efficiency of equipment.
3rd generation SiC Schottky barrier diode (SBD)
SiC SBD that achieves low switching losses
By using SiC, a device with high withstand voltage and low switching loss (low reverse recovery charge) has been realized.
Diodes / SiC Schottky Barrier Diodes
Contributes to high efficiency and low loss of high output power supply
Significantly reduced recovery loss compared to FRD: fast recovery diodes
Diodes / SiC Schottky Barrier Diodes
Improved JBS structure to reduce the leakage current and increase the surge current capability
The improved JBS structure has been applied to improve the leakage current of the SBD and the surge current capacity.
Diodes / SiC Schottky Barrier Diodes
SiC devices suitable for power supply circuits
SiC Schottky barrier diodes (SBDs) have achieved high breakdown voltages for SBDs, which are difficult to achieve with Si materials, and significantly reduced reverse-recovery times (charges) that could not be achieved with p-n junction diodes, such as Si-FRD(Fast Recovery Diode).
Diodes / SiC Schottky Barrier Diodes
High withstand voltage (reverse voltage) characteristics of SiC SBDs
A device with a high breakdown voltage has been realized with dielectric breakdown field strength nearly 10 times higher than that of Si.
Diodes / SiC Schottky Barrier Diodes

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應用

Inverter/Servo
Microwave Oven
Uninterruptible Power Supply
Thermostat
IoT Sensor

參考設計

PCB Photo (example)
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Simulation

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