Contact us

在新視窗打開 在新視窗打開


NEW! Second generation 650V SiC SBDs (silicon carbide schottky barrier diodes)

The new second generation 650V SiC SBDs, improved with both surge forward current (IFSM) and switching loss (Ron*Qc) [Note 1], realizes higher power supply efficiency.


  • High surge forward current (IFSM): 8 times higher than current rating IF(DC)
  • Low switching loss index (Ron*Qc) [Note 1]: Higher efficiency
  • Isolated package line-up: Easier circuit and thermal design to reduce assembly processes


Power factor correction (PFC) for high efficiency power supply, Chopper circuit, and free wheel diode for switching element

  • Commercial use/OA equipment: 4K Liquid Crystal Display, projector, multifunction printer
  • Industrial use: telecommunications base stations, PC servers


New second generation 650V SBDs Line-up / Characteristics

Package Characteristics
Absolute Maximum Ratings Electrical Characteristics
Forward DC Current
Non-repetitive Peak Forward Surge Current
Total Power Dissipation
Forward Voltage
Junction Capacitance
Total Capacitive Charge
Symbol IF(DC) IFSM Ptot VF Ron Cj QC
Value Max Max Max Typ.
Typ. Typ. Typ.
Unit (A) (A) (W) (V) (mΩ) (pF) (nC)

Test Conditions/

Part Number
- @ Half-sine Wave
t=10 ms
- @IF(DC) @IF(DC)×
0.25 to 1.0
@VR=1 V @VR=400 V


TRS4E65F 4 39 55.6 1.45
120 165 10.4
TRS6E65F 6 55 68.2 82 230 15.1
TRS8E65F 8 69 83.3 62 300
TRS10E65F 10 83 107 48 400


TRS4A65F 4 37 33.6 1.45
120 165 10.4
TRS6A65F 6 52 35.4 82 230
TRS8A65F 8 65 37.5 62 300
TRS10A65F 10 79 39.7 48 400

[Notes 1] RON: Anode-cathode on-resistance, Qc: Total capacitive charge

SiC Schottky barrier diodes help reduce the energy consumption and improve the power efficiency of power-hungry equipment.

Due to a major shift in customer focus to environmentally friendly, clean energy sources, market demand is increasing for power devices that will make it possible to achieve low-loss and high-efficiency power conversion. Silicon carbide (SiC), a wide-gap semiconductor, is expected to be a material for the next-generation high-voltage, low-loss power devices because its critical breakdown field is more than eight times that of silicon (Si).
While Si SBDs are available with a VRRM of only up to 200 V, Toshiba's new SiC-based Schottky barrier diodes (SBDs) provide higher reverse voltage (VRRM) because of low leakage current in the high-temperature region. SiC Schottky Barrier Diodes are ideal for power conversion applications such as server power supplies and solar power conditioners. At high voltage and high current, the operation of SiC Schottky Barrier Diodes is more stable than that of the conventional Si SBDs. Therefore, SiC Schottky Barrier Diodes help to significantly reduce the loss of power through heat.

● Physical property comparisons between Si and SiC

● Physical property comparisons between Si and SiC
Characteristic Si SiC(4H)
Band gap 1.12 eV 3.26 eV
Electron mobility μ 1400 cm2/Vs 1000 cm2/Vs
Relative dielectric constant ε 11.8 9.7
Critical breakdown field E 0.3 MV/cm 2.5 MV/cm
Transistor performance limit
Ron・A (@600 V)
70 mΩ・cm2 0.14 mΩ・cm2
Features Easily available
Easy to process
Easy to reduce on-resistance
Low leakage current at high temperatures
Easy to create designs with high
withstand voltage

Characteristics of SiC Schottky Barrier Diodes

Majority carrier device with a Schottky barrier structure

SiC Schottky Barrier Diodes are majority carrier devices and have the same structure as Si SBDs. Fabricated with a wide-gap semiconductor, SiC Schottky Barrier Diodes exhibit low leakage current even in the high-temperature region, making it possible to maintain stable operation at high voltage and high current. Toshiba's SiC Schottky Barrier Diodes have a Junction Barrier Schottky (JBS) structure to further reduce leakage current.

JBS Structure

High-speed switching

Theoretically, SiC Schottky Barrier Diodes provide zero reverse recovery time, trr, because of the Schottky structure and majority carrier operation. In practice, however, SiC Schottky Barrier Diodes also have a reverse recovery region. Its reverse recovery time, trr, is as short as 20 ns (at Ta = 25°C), compared with Si high-efficiency diodes (HEDs) with a trr of 40 ns.

Comparison of Reverse Recovery Time, trr, Between a SiC Schottky Barrier Diode and a Si HED Diode (Tj = 150˚C)

Recovery characteristics independent of temperature

Because SiC Schottky Barrier Diodes are majority carrier devices, their electrical performance is theoretically independent of temperature. Thus, SiC Schottky Barrier Diodes exhibit excellent performance even in the high-temperature region.

Reverse Recovery Time (trr)/Reverse Recovery Current (Irr) vs. Temperature

Lower total loss than Si HEDs (as tested by Toshiba)

SiC Schottky Barrier Diodes offer low total loss, which consists of conduction loss and switching loss. Therefore, SiC Schottky Barrier Diodes can switch at high frequencies, making it possible to reduce the size of power supplies.

Total Loss vs. Frequency

* HED: High-Efficiency Diodes

Toshiba's Schottky Barrier Diodes

Feature 1 Outstanding VF -IR trade-offs at high temperatures

There is a trade-off between the forward voltage (VF) and reverse current (IR) of an SiC Schottky Barrier Diode. Toshiba is endeavoring to improve the VF-IR trade-off by optimizing the device structure. Our SiC Schottky Barrier Diodes exhibit low loss even in the high-temperature region and thus help reduce power loss.

Feature 2 Low VF temperature coefficient

Toshiba's SiC Schottky Barrier Diodes have low dependence on forward voltage, VF, making it possible to reduce conduction loss in the high-temperature region.

Forward Voltage (VF) vs. Temperature

650/1200-V SiC Schottky Barrier Diode Lineup

Absolute Maximum Ratings Electrical Characteristics (Ta=25℃) TO-220-2L TO-220F-2L TO-247 TO-3P(N)
Typ. Max Test Conditions @IF(A) Max Test Conditions @VR(V)
650 6 1.5 1.7 6 90 650 TRS6E65C TRS6A65C
8 1.5 1.7 8 90 650 TRS8E65C TRS8A65C
10 1.5 1.7 10 90 650 TRS10E65C TRS10A65C
12 1.54 1.7 12 90 650 TRS12E65C TRS12A65C TRS12N65D
16 1.5 1.7 16 90 650 TRS16A65C TRS16N65D
20 1.5 1.7 20 90 650 TRS20N65D
24 1.54 1.7 24 90 650 TRS24N65D
1200 20 1.5 1.7 20 100 1200 TRS20J120C


雖然SiC SBD的導通損耗高於Si FRD,但SiC SBD具有較低的切換損耗,所以總體損耗有所降低。

損耗模擬:IF=6A,VDD=400V,f=150kHz,50%Duty cycle



·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.